參數(shù)資料
型號: TXDV412
廠商: 意法半導(dǎo)體
元件分類: 三端雙向可控硅開關(guān)
英文描述: ALTERNISTORS
中文描述: 交變
文件頁數(shù): 1/5頁
文件大?。?/td> 309K
代理商: TXDV412
TXDV 412 ---> 812
March 1995
ALTERNISTORS
Symbol
Parameter
Value
Unit
IT(RMS)
RMS on-state current
(360
°
conduction angle)
Tc = 90
°
C
12
A
ITSM
Non repetitive surge peak on-state current
( Tj initial = 25
°
C )
tp = 2.5 ms
170
A
tp = 8.3 ms
125
tp = 10 ms
120
I2t
I2t value
tp = 10 ms
72
A2s
dI/dt
Critical rate of rise of on-state current
Gate supply : IG = 500mA diG/dt = 1A/
μ
s
Repetitive
F = 50 Hz
20
A/
μ
s
Non
Repetitive
100
Tstg
Tj
Storage and operating junction temperature range
- 40 to + 150
- 40 to + 125
°
C
°
C
Tl
Maximum lead temperature for soldering during 10 s at 4.5 mm
from case
260
°
C
TO220AB
(Plastic)
A1
A2G
VERY HIGH COMMUTATION : > 42.5 A/ms
(400Hz)
.
INSULATING VOLTAGE = 2500V
(RMS)
(UL RECOGNIZED : E81734)
.
dV/dt : 500 V/
μ
s min
DESCRIPTION
Symbol
Parameter
TXDV
Unit
412
612
812
VDRM
VRRM
Repetitive peak off-state voltage
Tj = 125
°
C
400
600
800
V
ABSOLUTE RATINGS
(limiting values)
FEATURES
The TXDV 412 ---> 812 use a high performance
passivated glass alternistor technology. Featuring
very high commutation levels and high surge cur-
rent capability, this family is well adapted to power
control on inductive load (motor, transformer...)
1/5
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