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參數(shù)資料
| 型號： | TSTS7500 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 激光器 |
| 英文描述： | LED IrLED 950nm 2-Pin TO-18 Bulk |
| 中文描述： | Infrared Emitters 30 Degree 170mW 950nm |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 131K |
| 代理商： | TSTS7500 |
www.vishay.com
270
For technical questions, contact: emittertechsupport@vishay.com
Document Number: 81049
Rev. 1.8, 04-Sep-08
TSTS7500
Vishay Semiconductors
Infrared Emitting Diode, RoHS Compliant,
950 nm, GaAs
Fig. 5 - Relative Forward Voltage vs. Ambient Temperature
Fig. 6 - Radiant Intensity vs. Forward Current
Fig. 7 - Radiant Power vs. Forward Current
Fig. 8 - Relative Radiant Intensity/Power vs. Ambient Temperature
Fig. 9 - Relative Radiant Power vs. Wavelength
Fig. 10 - Relative Radiant Intensity vs. Angular Displacement
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0.
8
0.9
1.0
1.1
1.2
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F
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V
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94 7990
T
am
b
- Am
b
ient Temperat
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re (°C)
100
8
0
60
40
20
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I
F
= 10 mA
I
W
/
e
I
F
- For
w
ard C
u
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10
1
10
2
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4
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Φ
I
F
- For
w
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3
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4
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0.1
1
10
1000
100
- 10
10
T
am
b
- Am
b
ient Temperat
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re (°C)
50
0
100
0
0.4
0.
8
1.2
1.6
I
e
;
140
94 7993
I
F
= 20 mA
Φ
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900
950
0
0.25
0.5
0.75
1.0
1.25
-
W
a
v
elength (nm)
1000
94 7994
Φ
e
v
e
w
e
I
F
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λ
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0.2
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0.2
0.4
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-
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e
e
0.6
94 797
8
0.6
0.9
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8
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30°
10°
20°
40°
50°
60°
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相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TSUS3400 | TSUS3400 - Infrared Emitting Diode, 950 nm, GaAs |
| TSUS4300 | LED IrLED 950nm 2-Pin T-1 |
| TSUS4400 | LED IrLED 950nm 2-Pin T-1 Bulk |
| TSUS5202 | LED IrLED 950nm 2-Pin T-1 3/4 |
| TSUS5200 | LED IrLED 950nm 2-Pin T-1 3/4 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TSTS7500_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs |
| TSTS7501 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case |
| TSTS7502 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case |
| TSTS7503 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case |
| TSTSPX34_DTEST6 WAF | 制造商:Fairchild Semiconductor Corporation 功能描述: |
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