
TSSF4500
www.vishay.com
Vishay Semiconductors
Rev. 1.7, 24-Aug-11
1
Document Number: 81040
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
High Speed Infrared Emitting Diode, 890 nm,
GaAlAs Double Hetero
DESCRIPTION
TSSF4500 is an infrared, 890 nm emitting diode in GaAlAs
double hetero (DH) technology with high radiant power and
high speed, molded in a clear, untinted plastic package.
FEATURES
Package type: leaded
Package form: side view
Dimensions (L x W x H in mm): 4.5 x 4 x 4.8
Peak wavelength:
λ
p
= 890 nm
High reliability
High radiant power
High radiant intensity
Angle of half intensity:
= ± 22°
Low forward voltage
Suitable for high pulse current operation
High modulation bandwidth: f
c
= 12 MHz
Good spectral matching with Si photodetectors
Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Note
**
Please see document “Vishay Material Category Policy”:
www.vishay.com/doc99902
APPLICATIONS
Infrared high speed remote control and free air data
transmission systems with high modulation frequencies or
high data transmission rate requirements
TSSF4500 is ideal for the design of transmission systems
according to IrDA requirements and for carrier frequency
based systems (e.g. ASK/FSK - coded, 450 kHz or 1.3
MHz)
Note
Test conditions see table “Basic Characteristics”
Note
MOQ: minimum order quantity
94 8688
PRODUCT SUMMARY
COMPONENT
TSSF4500
I
e
(mW/sr)
20
(deg)
± 22
λ
p
(nm)
890
t
r
(ns)
30
ORDERING INFORMATION
ORDERING CODE
TSSF4500
PACKAGING
Bulk
REMARKS
PACKAGE FORM
Side view
MOQ: 4000 pcs, 4000 pcs/bulk
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Reverse voltage
Forward current
Peak forward current
t
p
/T = 0.5, t
p
= 100 μs
Surge forward current
Power dissipation
SYMBOL
V
R
I
F
I
FM
I
FSM
P
V
VALUE
5
100
200
1.5
160
UNIT
V
mA
mA
A
mW
t
p
= 100 μs