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參數(shù)資料
| 型號： | TSTA7100 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 激光器 |
| 英文描述： | LED IrLED 875nm 2-Pin TO-18 Bulk |
| 中文描述： | Infrared Emitters 5 Degree 180mW 875nm |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 135K |
| 代理商： | TSTA7100 |
Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs
www.vishay.com
248
For technical questions, contact: emittertechsupport@vishay.com
Document Number: 81044
Rev. 1.7, 04-Sep-08
TSTA7100
Vishay Semiconductors
DESCRIPTION
TSTA7100 is an infrared, 875 nm emitting diode in GaAlAs
technology in a hermetically sealed TO-18 package with
lens.
FEATURES
Package type: leaded
Package form: TO-18
Dimensions (in mm):
4.7
Peak wavelength:
λ
p
= 875 nm
High reliability
High radiant power
High radiant intensity
Angle of half intensity:
= ± 5°
Low forward voltage
Suitable for high pulse current operation
Good spectral matching with Si photodetectors
Lead
(Pb)-free
component
RoHS 2002/95/EC and WEEE 2002/96/EC
in
accordance
with
APPLICATIONS
Radiation source near infrared range
Note
Test conditions see table “Basic Characteristics”
Note
MOQ: minimum order quantity
Note
T
amb
= 25 °C, unless otherwise specified
94
8
4
8
3
PRODUCT SUMMARY
COMPONENT
TSTA7100
I
e
(mW/sr)
50
(deg)
± 5
λ
P
(nm)
875
t
r
(ns)
600
ORDERING INFORMATION
ORDERING CODE
TSTA7100
PACKAGING
Bulk
REMARKS
PACKAGE FORM
TO-18
MOQ: 1000 pcs, 1000 pcs/bulk
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Reverse voltage
Forward current
Peak forward current
Surge forward current
TEST CONDITION
SYMBOL
V
R
I
F
I
FM
I
FSM
P
V
P
V
T
j
T
stg
R
thJA
R
thJC
VALUE
5
100
200
2.5
180
500
100
- 55 to + 100
450
150
UNIT
V
mA
mA
A
mW
mW
°C
°C
K/W
K/W
t
p
/T = 0.5, t
p
≤
100 μs
t
p
≤
100 μs
Power dissipation
T
case
≤
25 °C
Junction temperature
Storage temperature range
Thermal resistance junction/ambient
Thermal resistance junction/case
leads not soldered
leads not soldered
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TSTA7300 | LED IrLED 870nm 2-Pin TO-18 |
| TSTS7100 | LED IrLED 950nm 2-Pin TO-18 |
| TSTS7300 | TSTS7300 - Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs |
| TSTS7500 | LED IrLED 950nm 2-Pin TO-18 Bulk |
| TSUS3400 | TSUS3400 - Infrared Emitting Diode, 950 nm, GaAs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TSTA7100 | 制造商:Vishay Semiconductors 功能描述:IR EMITTING DIODE |
| TSTA7100_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs |
| TSTA7300 | 功能描述:紅外發(fā)射源 12 Degree 180mW 875nm RoHS:否 制造商:Fairchild Semiconductor 波長:880 nm 射束角:+/- 25 輻射強度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk |
| TSTA7300_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs |
| TSTA7500 | 功能描述:紅外發(fā)射源 30 Degree 180mW RoHS:否 制造商:Fairchild Semiconductor 波長:880 nm 射束角:+/- 25 輻射強度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk |
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