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| 型號(hào)： | TSP2100DBVT |
| 英文描述： | Analog IC |
| 中文描述： | 模擬IC |
| 文件頁數(shù)： | 13/17頁 |
| 文件大?。?/td> | 351K |
| 代理商： | TSP2100DBVT |
TPS2100, TPS2101
V
AUX
POWER-DISTRIBUTION SWITCHES
SLVS197D – JUNE 1999 – REVISED JUNE 2000
13
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 22
230
205
180
–40
–20
0
20
40
–
r
255
280
IN1-OUT ON-STATE RESISTANCE
vs
JUNCTION TEMPERATURE
305
60
80
100
m
VI(INx) = 4 V
VI(INx) = 3.3 V
VI(INx) = 2.7 V
TJ Junction Temperature –
°
C
Figure 23
1.25
1
0.75
0.5
–40
–20
0
20
40
1.5
1.75
IN2-OUT ON-STATE RESISTANCE
vs
JUNCTION TEMPERATURE
2
60
80
100
–
r
VI(INx) = 4 V
VI(INx) = 3.3 V
VI(INx) = 2.7 V
TJ Junction Temperature –
°
C
APPLICATION INFORMATION
EN
IN1
IN2
OUT
GND
3.3 V VAUX
3.3 V VCC
CardBus or System Controller
TPS2100
0.1
μ
F
0.1
μ
F
0.1
μ
F
xx
μ
F
3.3 V
Figure 24. Typical Application
power supply considerations
A 0.01-
μ
F to 0.1-
μ
F ceramic bypass capacitor between IN and GND, close to the device is recommended. The
output capacitor should be chosen based on the size of the load during the transition of the switch. A 47-
μ
F
capacitor is recommended for 10-mA loads. Typical output capacitors (xx
μ
F, shown in Figure 24) required for
a given load can be determined from Figure 16 which shows the output voltage droop when output is switched
from IN2 to IN1. The output voltage droop is insignificant when output is switched from IN1 to IN2. Additionally,
bypassing the output with a 0.01-
μ
F to 0.1-
μ
F ceramic capacitor improves the immunity of the device to
short-circuit transients.
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