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參數(shù)資料
| 型號： | TSP2100DBVR |
| 英文描述： | Analog IC |
| 中文描述： | 模擬IC |
| 文件頁數(shù)： | 3/17頁 |
| 文件大?。?/td> | 351K |
| 代理商： | TSP2100DBVR |
TPS2100, TPS2101
V
AUX
POWER-DISTRIBUTION SWITCHES
SLVS197D – JUNE 1999 – REVISED JUNE 2000
3
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
Function Tables
TPS2100
VIN2
0 V
3.3 V
3.3 V
0 V
3.3 V
0 V
3.3 V
TPS2101
VIN2
0 V
3.3 V
3.3 V
0 V
3.3 V
0 V
3.3 V
VIN1
0 V
0 V
3.3 V
3.3 V
0 V
3.3 V
3.3 V
XX = don’t care
EN
XX
L
L
L
H
H
H
OUT
GND
GND
VIN1
VIN1
VIN2
VIN2
VIN2
VIN1
0 V
0 V
3.3 V
3.3 V
0 V
3.3 V
3.3 V
EN
XX
H
H
H
L
L
L
OUT
GND
GND
VIN1
VIN1
VIN2
VIN2
VIN2
Terminal Functions
TERMINAL
NO.
DESCRIPTION
NAME
TPS2100
DBV
TPS2101
DBV
1
I/O
D
D
3
EN
EN
GND
IN1
IN2
OUT
NC
Active-high enable for IN1-OUT switch
Active-low enable for IN1-OUT switch
Ground
Main Input voltage, NMOS drain (250 m
)
Auxilliary input voltage, PMOS drain (1.3
)
Power switch output
No connection
1
2
5
3
4
3
2
5
1
I
I
I
I
2
5
3
4
2
5
1
7, 8
4, 6
7, 8
4, 6
O
detailed description
power switches
n-channel MOSFET
The IN1-OUT n-channel MOSFET power switch has a typical on-resistance of 250 m
at 3.3-V input voltage,
and is configured as a high-side switch.
p-channel MOSFET
The IN2-OUT p-channel MOSFET power switch with typical on-resistance of 1.3
at 3.3-V input voltage and
is configured as a high-side switch. When operating, the p-channel MOSFET quiescent current is reduced to
less than 1.5
μ
A.
charge pump
An internal charge pump supplies power to the driver circuit and provides the necessary voltage to pull the gate
of the MOSFET above the source. The charge pump operates from input voltages as low as 2.7 V and requires
very little supply current.
driver
The driver controls the gate voltage of the IN1-OUT and IN2-OUT power switches. To limit large current surges
and reduce the associated electromagnetic interference (EMI) produced, the drivers incorporate circuitry that
controls the rise times and fall times of the output voltage.
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