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參數(shù)資料
| 型號： | TSMF1040 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | High Speed IR Emitting Diode in SMD Package |
| 中文描述： | 高速紅外發(fā)光二極管封裝的貼片 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 491K |
| 代理商： | TSMF1040 |
VISHAY
TSMF1000/1020/1030/1040
Vishay Semiconductors
Document Number 81061
Rev. 6, 21-May-03
www.vishay.com
1
16758
TSMF1000
TSMF1030
TSMF1040
TSMF1020
High Speed IR Emitting Diode in SMD Package
Description
TSMF1000 series are high speed infrared emitting
diodes in GaAlAs/GaAs/GaAlAs double hetero tech-
nology (DH) molded in clear SMD package with dome
lens.
DH chip technology represents best performance for
speed, radiant power, forward voltage and longterm
reliability.
Features
High speed
Extra high radiant power
Low forward voltage
Suitable for high pulse current operation
Angle of half intensity
= ± 17°
Peak wavelength
λ
p
= 870 nm
Longterm reliability
Matched with PIN Photodiode TEMD1000
Versatile terminal configurations
Applications
IrDA compatible data transmission
Miniature light barrier
For control and drive circuits
Photointerrupters
Incremental sensors
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Reverse Voltage
Basic Characteristics
T
amb
= 25 °C, unless otherwise specified
T
amb
= 25 °C, unless otherwise specified
Parameter
Forward Voltage
Test condition
Symbol
V
R
I
F
I
FM
I
FSM
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
Value
5
Unit
V
Forward Current
100
mA
Peak Forward Current
t
p
/T = 0.5, t
p
= 100
μ
s
t
p
= 100
μ
s
200
mA
Surge Forward Current
0.8
A
Power Dissipation
190
mW
Junction Temperature
100
°C
Operating Temperature Range
- 40 to + 85
°C
Storage Temperature Range
- 40 to + 100
°C
Soldering Temperature
t
≤
5sec
<260
°C
Thermal Resistance Junction/Ambient
400
K/W
Test condition
Symbol
V
F
V
F
TK
VF
I
R
C
j
Min
Typ.
1.3
Max
1.5
Unit
V
I
F
= 20 mA
I
F
= 1 A, t
p
= 100
μ
s
I
F
= 1.0mA
V
R
= 5 V
V
R
= 0 V, f = 1 MHz, E = 0
2.4
V
Temp. Coefficient of V
F
Reverse Current
- 1.7
mV/K
μ
A
pF
10
Junction Capacitance
160
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| TSMF3710 | High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero |
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| TSMF3710-GS18 | High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero |
| TSML1000 | High-Power SMD IRED GaAlAs/GaAs |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TSMF14 | 制造商:TAITRON 制造商全稱:TAITRON Components Incorporated 功能描述:1.0A Surface Mount Schottky Rectifier |
| TSMF3700 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:GaAlAs/GaAlAs Infrared Emitting Diode in SMT Package |
| TSMF3700GS08 | 制造商:VISHAY 功能描述:New |
| TSMF3700-GS08 | 功能描述:紅外發(fā)射源 60 Degree 160mW RoHS:否 制造商:Fairchild Semiconductor 波長:880 nm 射束角:+/- 25 輻射強(qiáng)度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk |
| TSMF3700-GS08 | 制造商:Vishay Semiconductors 功能描述:IR Emitting Diode |
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