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參數(shù)資料
| 型號： | TSML1020 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Extented Power IR Emitting Diode in SMD Package |
| 中文描述： | Extented功率紅外發(fā)光二極管封裝的貼片 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 479K |
| 代理商： | TSML1020 |
VISHAY
TSML1000/1020/1030/1040
Vishay Semiconductors
Document Number 81033
Rev. 6, 21-May-03
www.vishay.com
1
16852
TSML1000
TSML1030
TSML1040
TSML1020
Extented Power IR Emitting Diode in SMD Package
Description
TSML1000 series are high efficiency infrared emitting
diodes in GaAlAs on GaAs technology molded in
clear SMD package.
This technology represents best performance for radi-
ant power under pulse conditions, forward voltage
and reliability.
Features
Outstanding high radiant power
Low forward voltage
Suitable for high pulse current operation
Angle of half intensity
= ± 12°
Peak wavelength
λ
p
= 950 nm
High reliability
Matched Phototransistor series: TEMT1000
Versatile terminal configurations
Applications
For remote control
Photointerrupters
Punched tape readers
Encoder
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Reverse Voltage
Basic Characteristics
T
amb
= 25 °C, unless otherwise specified
T
amb
= 25 °C, unless otherwise specified
Parameter
Forward Voltage
Test condition
Symbol
V
R
I
F
I
FM
I
FSM
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
Value
5
Unit
V
Forward Current
100
mA
Peak Forward Current
t
p
/T = 0.5, t
p
= 100
μ
s
t
p
= 100
μ
s
200
mA
Surge Forward Current
1.0
A
Power Dissipation
190
mW
Junction Temperature
100
°C
Operating Temperature Range
- 40 to + 85
°C
Storage Temperature Range
- 40 to + 100
°C
Soldering Temperature
t
≤
5sec
<260
°C
Thermal Resistance Junction/Ambient
400
°C
Test condition
Symbol
V
F
V
F
TK
VF
I
R
C
j
I
e
Min
Typ.
1.2
Max
1.5
Unit
V
I
F
= 20 mA, t
p
= 20 ms
I
F
= 1 A, t
p
= 100
μ
s
I
F
= 1 mA
V
R
= 5 V
V
R
= 0 V, f = 1 MHz, E = 0
I
F
= 20 mA, t
p
= 20 ms
2.6
V
Temp. Coefficient of V
F
Reverse Current
- 1.85
mV/K
μ
A
pF
10
Junction Capacitance
25
Radiant Intensity
3
7
mW/sr
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TSML1040 | Extented Power IR Emitting Diode in SMD Package |
| TSML3710 | GaAs/GaAlAs Infrared Emitting Diode in SMT Package |
| TSOP1130GL1 | Photo Modules for PCM Remote Control Systems |
| TSOP1140GL1 | Photo Modules for PCM Remote Control Systems |
| TSOP1130KA1 | IR Receiver Modules for Remote Control Systems |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TSML1020 | 制造商:Vishay Semiconductors 功能描述:IR Emitting Diode |
| TSML1030 | 功能描述:紅外發(fā)射源 5V 35mW 940nm 12 Deg RoHS:否 制造商:Fairchild Semiconductor 波長:880 nm 射束角:+/- 25 輻射強(qiáng)度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk |
| TSML1040 | 功能描述:紅外發(fā)射源 5V 35mW 940nm 12 Deg RoHS:否 制造商:Fairchild Semiconductor 波長:880 nm 射束角:+/- 25 輻射強(qiáng)度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk |
| TSML3700 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:GaAs/GaAlAs Infrared Emitting Diode in SMT Package |
| TSML3700-GS08 | 制造商:Vishay Semiconductors 功能描述:NOT RECOMMENDED FOR NEW DESIGN - Tape and Reel |
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