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參數(shù)資料
| 型號： | TSM4410DCSRL |
| 廠商： | Taiwan Semiconductor Co., Ltd. |
| 英文描述： | Dual N-Channel Enhancement Mode MOSFET |
| 中文描述： | 雙N溝道增強(qiáng)型MOS管 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 172K |
| 代理商： | TSM4410DCSRL |
TSM4410D
2-2
2006/04 rev. A
Electrical Characteristics (single channel)
T
J
= 25
o
C, unless otherwise noted
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
GS
= 0V, I
D
= 250uA
BV
DSS
25
--
--
V
V
GS
= 4.5V, I
D
= 8A
R
DS(ON)
--
13
15
m
Drain-Source On-State Resistance
V
GS
= 10V, I
D
= 10A
R
DS(ON)
--
18
21
m
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250uA
V
GS(TH)
1.0
--
3.0
V
Zero Gate Voltage Drain Current
V
DS
= 25V, V
GS
= 0V
I
DSS
--
--
1.0
uA
Gate Body Leakage
V
GS
= ± 20V, V
DS
= 0V
I
GSS
--
--
±100
nA
Forward Transconductance
V
DS
=10V, I
D
= 10A
g
fs
--
15
--
S
Dynamic
Total Gate Charge
Q
g
--
15
26
Gate-Source Charge
Q
gs
--
2.5
--
Gate-Drain Charge
V
DS
= 15V, I
D
= 10A,
V
GS
= 10V
Q
gd
--
3
--
nC
Turn-On Delay Time
t
d(on)
--
20
--
Turn-On Rise Time
t
r
--
6
--
Turn-Off Delay Time
t
d(off)
--
49
--
Turn-Off Fall Time
V
DD
= 15V, R
L
= 15
,
I
D
= 1A, V
GEN
= 10V,
R
G
= 6
t
f
--
16
--
nS
Input Capacitance
C
iss
--
921
--
Output Capacitance
C
oss
--
208
--
Reverse Transfer Capacitance
V
DS
= 15V, V
GS
= 0V,
f = 1.0MHz
C
rss
--
108
--
pF
Source-Drain Diode
Max. Diode Forward Current
I
S
--
--
3
A
Diode Forward Voltage
Note: 1. pulse test: pulse width <=300uS, duty cycle <=2%
2. Negligible, Dominated by circuit inductance.
I
S
= 3A, V
GS
= 0V
V
SD
--
0.87
1.5
V
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