參數(shù)資料
型號(hào): TSM4410DCSRL
廠商: Taiwan Semiconductor Co., Ltd.
英文描述: Dual N-Channel Enhancement Mode MOSFET
中文描述: 雙N溝道增強(qiáng)型MOS管
文件頁(yè)數(shù): 1/5頁(yè)
文件大小: 172K
代理商: TSM4410DCSRL
TSM4410D
1-1
2006/04 rev. A
TSM4410D
Dual N-Channel Enhancement Mode MOSFET
Vds = 25V
Id = 10A
Rds(on), Vgs @ 10V, Ids @ 10A = 21m
Rds(on), Vgs @ 4.5V, Ids @ 8A = 15m
Features
Advanced trench process technology
High density cell design for ultra low on-resistance
Excellent thermal and electrical capabilities
Fully characterized avalanche voltage and current
Ordering Information
Part No.
Packing
Package
TSM4410DCS RL
Tape & Reel
2,500/per reel
SOP-8
Block Diagram
Absolute Maximum Rating
(T
A
= 25
o
C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
25
V
Gate-Source Voltage
V
GS
±20
V
Continuous Drain Current
I
D
10
Pulsed Drain Current
I
DM
50
A
T
A
= 25
o
C
2.5
Maximum Power Dissipation
T
A
= 70
o
C
P
D
1.6
W
Operating Junction Temperature
T
J
+150
o
C
Operating Junction and Storage Temperature Range
T
J
, T
STG
-55 to +150
o
C
Thermal Performance
Parameter
Symbol
Limit
Unit
Junction-to-Foot Thermal Resistance
R
θ
jF
22
Junction to Ambient Thermal Resistance (PCB mounted)
Note: 1. Maximum DC current limited by the package
2. 1-in
2oz Cu PCB board
R
θ
ja
50
o
C/W
Pin assignment:
1. Source 1
2. Gate 1
3. Source 2
4. Gate 2
8. Drain 1
7. Drain 1
6. Drain 2
5. Drain 2
相關(guān)PDF資料
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TSM4410D 25V Dual N-Channel MOSFET
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