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參數(shù)資料
| 型號(hào)： | TSM3460CX6 |
| 廠商： | Taiwan Semiconductor Co., Ltd. |
| 英文描述： | 20V N-Channel MOSFET w/ESD Protected |
| 中文描述： | 20V的N溝道MOSFET瓦特/ ESD保護(hù) |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 174K |
| 代理商： | TSM3460CX6 |
TSM3460
1-1
2003/12 rev. F
TSM3460
20V N-Channel MOSFET w/ESD Protected
V
DS
= 20V
R
DS (on)
, Vgs @ 4.5V, Ids @ 6A =22m
(typ.)
R
DS (on)
, Vgs @ 2.5V, Ids @ 5A =30m
(typ.)
Features
Advanced trench process technology
High density cell design for ultra low on-resistance
Excellent thermal and electrical capabilities
Specially designed for Li-ion battery packs.
Battery switch application
Ordering Information
Part No.
Packing
Package
TSM3460CX6
Tape & Reel
3,000/per reel
SOT-26
Block Diagram
Absolute Maximum Rating
(Ta = 25
o
C
unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
20V
V
Gate-Source Voltage
V
GS
± 12
V
Ta = 25
o
C
I
D
6
A
Continuous Drain Current, V
GS
@4.5V.
Ta = 70
o
C
I
D
5
A
Pulsed Drain Current, V
GS
@4.5V
I
DM
30
A
Diode Forward Current
Is
1.5
A
Ta = 25
o
C
1.3
Maximum Power Dissipation
Ta = 70
o
C
P
D
0.96
W
Operating Junction and Storage Temperature Range
T
J
, T
STG
- 55 to +150
o
C
Thermal Performance
Parameter
Symbol
Limit
Unit
Junction to Foot (Drain) Thermal Resistance
R
θ
jf
35
o
C/W
Junction to Ambient Thermal Resistance (PCB mounted)
Note: Surface mounted on FR4 board t<=300uS, Duty < 2%.
R
θ
ja
120
o
C/W
Pin assignment:
1. Drain
2. Drain
3. Gate
6. Drain
5, Drain
4. Source
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