參數(shù)資料
型號(hào)： TSM3457CX6RF
廠商： Taiwan Semiconductor Co., Ltd.
英文描述： 30V P-Channel MOSFET
中文描述： 30V的P通道MOSFET
文件頁(yè)數(shù)： 1/6頁(yè)
文件大小： 313K
代理商： TSM3457CX6RF
TSM3457
30V P-Channel MOSFET
1/6
Version: A07
SOT-26
Features
●
●
Advance Trench Process Technology
High Density Cell Design for Ultra Low On-resistance
Application
●
●
Load Switch
PA Switch
Ordering Information
Part No.
TSM3457CX6 RF
Package
SOT-26
Packing
3Kpcs / 7” Reel
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V
DS
V
GS
I
D
I
DM
I
S
Limit
-30
±20
Unit
V
V
Continuous Drain Current
-5
A
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a,b
-20
-1.7
A
A
Ta = 25
o
C
Ta = 70
o
C
2.0
Maximum Power Dissipation
P
D
1.3
+150
W
Operating Junction Temperature
T
J
o
C
o
C
Operating Junction and Storage Temperature Range
T
J
, T
STG
- 55 to +150
Thermal Performance
Parameter
Junction to Case Thermal Resistance
Junction to Ambient Thermal Resistance (PCB mounted)
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t
≤
5 sec.
Symbol
R
JC
R
JA
Limit
30
80
Unit
o
C/W
o
C/W
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(m
Ω
)
I
D
(A)
54 @ V
GS
= 10V
-5
-30
100 @ V
GS
= 4.5V
-3.7
Block Diagram
P-Channel MOSFET
Pin Definition:
1. Drain 6. Drain
2. Drain 5, Drain
3. Gate 4. Source
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