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參數(shù)資料
| 型號： | TSM3443CX6 |
| 廠商： | Taiwan Semiconductor Co., Ltd. |
| 英文描述： | 20V P-Channel Enhancement-Mode MOSFET |
| 中文描述： | 20V的P通道增強(qiáng)型MOSFET |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 163K |
| 代理商： | TSM3443CX6 |
TSM3443 Preliminary
1-3
2006/02 rev. A
TSM3443
Preliminary
-20V P-Channel Enhancement-Mode MOSFET
SOT-26
V
DS
= -20V
R
DS (on)
, Vgs @ -4.5V, Ids @ -4.7A =60m
Ω
R
DS (on)
,
Vgs @ -2.5V, Ids @ -3.7A =100m
Ω
Features
Advanced trench process technology
High density cell design for ultra low on-resistance
Fully Characterized Avalanche Voltage and Current
Improved Shoot-Through FOM
Ordering Information
Part No.
Packing
Package
TSM3443CX6
Tape & Reel
3,000/per reel
SOT-26
Block Diagram
P-Channel MOSFET
Absolute Maximum Rating
(Ta = 25
o
C
unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
-20V
V
Gate-Source Voltage
V
GS
±12
V
Continuous Drain Current,
I
D
-4.7
A
Pulsed Drain Current,
I
DM
-20
A
Ta = 25
o
C
2
Maximum Power Dissipation
Ta = 70
o
C
P
D
1.3
W
Operating Junction Temperature
T
J
+150
o
C
Operating Junction and Storage Temperature Range
Thermal Performance
T
J
, T
STG
- 55 to +150
o
C
Parameter
Symbol
Limit
Unit
Junction to Foot (Drain) Thermal Resistance
R
θ
jf
30
o
C/W
Junction to Ambient Thermal Resistance (PCB mounted)
Note: Surface mounted on FR4 board t<=10sec.
R
θ
ja
50
o
C/W
Pin assignment:
1. Drain
2. Drain
3. Gate
6. Drain
5, Drain
4. Source
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TSM3443CX6 RF | 制造商:SKMI/Taiwan 功能描述:Trans MOSFET P-CH 20V 4.7A 6-Pin SOT-26 T/R 制造商:Taiwan Semiconductor 功能描述:Trans MOSFET P-CH 20V 4.7A 6-Pin SOT-26 T/R |
| TSM3443CX6RF | 制造商:Taiwan Semiconductor 功能描述:MOSFET P-Channel 20V 4.7A SOT26 |
| TSM3443CX6RFG | 制造商:TSC 制造商全稱:Taiwan Semiconductor Company, Ltd 功能描述:20V P-Channel MOSFET |
| TSM3446 | 制造商:TSC 制造商全稱:Taiwan Semiconductor Company, Ltd 功能描述:20V N-Channel MOSFET |
| TSM3446_10 | 制造商:TSC 制造商全稱:Taiwan Semiconductor Company, Ltd 功能描述:20V N-Channel MOSFET |
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