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參數(shù)資料
型號(hào): TSM3441
廠商: Taiwan Semiconductor Co., Ltd.
英文描述: 20V P-Channel Enhancement-Mode MOSFET
中文描述: 20V的P通道增強(qiáng)型MOSFET
文件頁(yè)數(shù): 2/3頁(yè)
文件大?。?/td> 155K
代理商: TSM3441
TSM3441
2-3
2005/11 rev. B
Electrical Characteristics
(Ta = 25
o
C unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
GS
= 0V, I
D
= - 250uA
BV
DSS
- 20
--
--
V
Drain-Source On-State Resistance
V
GS
= - 4.5V, I
D
= -3A
R
DS(ON)
--
80
100
Drain-Source On-State Resistance
V
GS
= - 2.5V, I
D
= -2.0A
R
DS(ON)
--
112
150
m
Ω
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= - 250uA
V
GS(TH)
- 0.45
--
--
V
Zero Gate Voltage Drain Current
V
DS
= - 16V, V
GS
= 0V
I
DSS
--
--
-1.0
μ
A
Gate Body Leakage
V
GS
= ± 8V, V
DS
= 0V
I
GSS
--
--
±100
nA
On-State Drain Current
V
DS
- 10V, V
GS
= -5V
I
D(ON)
- 6
--
--
A
Forward Transconductance
V
DS
= - 5V, I
D
= - 3A
g
fs
--
6.5
--
S
Dynamic
Total Gate Charge
Q
g
--
5.4
10
Gate-Source Charge
Q
gs
--
0.8
--
Gate-Drain Charge
V
DS
= - 6V, I
D
= - 3A,
V
GS
= - 4.5V
Q
gd
--
1.1
--
nC
Turn-On Delay Time
t
d(on)
--
5
25
Turn-On Rise Time
t
r
--
19
60
Turn-Off Delay Time
t
d(off)
--
95
110
Turn-Off Fall Time
V
DD
= - 6V, R
L
= 6
Ω
,
I
D
= - 1A, V
GEN
= - 4.5V,
R
G
= 6
Ω
t
f
--
65
80
nS
Input Capacitance
C
iss
--
447
--
Output Capacitance
C
oss
--
127
--
Reverse Transfer Capacitance
V
DS
= - 6V, V
GS
= 0V,
f = 1.0MHz
C
rss
--
80
--
pF
Source-Drain Diode
Max. Diode Forward Current
I
S
--
--
-1.6
A
Diode Forward Voltage
Note : pulse test: pulse width <=300uS, duty cycle <=2%
I
S
= -1.6A, V
GS
= 0V
V
SD
--
-0.8
-1.2
V
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