參數(shù)資料
型號: TSM1N60LCH
廠商: Taiwan Semiconductor Co., Ltd.
英文描述: N-Channel Power Enhancement Mode MOSFET
中文描述: N溝道功率增強型MOS管
文件頁數(shù): 4/4頁
文件大?。?/td> 181K
代理商: TSM1N60LCH
TSM1N60L
4-4
2006/01 rev. A
TO-252 Mechanical Drawing
B
C
D
A
F
G
I
H
E
J
TO-252 DIMENSION
MILLIMETERS
MIN
MAX
6.570
6.840
9.250
10.400
0.550
0.700
2.560
2.670
2.300
2.390
0.490
0.570
1.460
1.580
0.520
0.570
5.340
5.550
1.460
1.640
INCHES
MIN
0.259
0.364
0.022
0.101
0.090
0.019
0.057
0.020
0.210
0.057
DIM
MAX
0.269
0.409
0.028
0.105
0.094
0.022
0.062
0.022
0.219
0.065
A
B
C
D
E
F
G
H
I
J
TO-251 Mechanical Drawing
TO-251 DIMENSION
MILLIMETERS
MIN
MAX
2.20
2.4
1.10
1.30
0.40
0.80
0.40
0.60
6.70
7.30
5.40
5.65
6.40
6.65
2.10
2.50
0.40
0.60
7.00
8.00
1.60
1.86
INCHES
MIN
0.087
0.043
0.016
0.016
0.264
0.213
0.252
0.083
0.016
0.276
0.063
DIM
MAX
0.095
0.051
0.032
0.024
0.287
0.222
0.262
0.098
0.024
0.315
0.073
A
A1
b
C
D
D1
E
e
F
L
L1
相關PDF資料
PDF描述
TSM1N60LCP N-Channel Power Enhancement Mode MOSFET
TSM1N60S_07 600V N-Channel Power MOSFET
TSM1N60SCT 600V N-Channel Power MOSFET
TSM1N60S N-Channel Power Enhancement Mode MOSFET
TSM1N60SCTA3 N-Channel Power Enhancement Mode MOSFET
相關代理商/技術參數(shù)
參數(shù)描述
TSM1N60LCH C5 制造商:SKMI/Taiwan 功能描述:Trans MOSFET N-CH 600V 1A 3-Pin(3+Tab) TO-251 Tube
TSM1N60LCP 功能描述:MOSFET 600V 1A N channel MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
TSM1N60LCP R0 制造商:SKMI/Taiwan 功能描述:Trans MOSFET N-CH 600V 1A 3-Pin(2+Tab) TO-252 T/R
TSM1N60SCT 功能描述:MOSFET 600V 1A N channel MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
TSM1N60SCT A3 制造商:SKMI/Taiwan 功能描述:Trans MOSFET N-CH 600V 0.3A 3-Pin TO-92 Ammo