參數(shù)資料
型號: TSIL6400
英文描述: GaAs/GaAlAs IR Emitting Diodes in ┆ 5 mm Package
中文描述: 砷化鎵/紅外發(fā)光二極管的GaAIAs 5毫米封裝在┆
文件頁數(shù): 3/5頁
文件大小: 114K
代理商: TSIL6400
TSIL6400
TELEFUNKEN Semiconductors
Rev. A1, 18-Oct-96
3 (5)
t
p
– Pulse Duration ( ms )
96 11987
10
0
10
1
10
1
10
–1
10
–1
10
0
10
2
10
–2
I
F
t
p
/T=0.01
I
FSM
= 1 A ( Single Pulse )
0.05
0.1
0.5
1.0
Figure 3. Pulse Forward Current vs. Pulse Duration
0
1
2
3
V
F
– Forward Voltage ( V )
4
96 11988
10
1
10
0
10
2
10
3
10
4
I
F
t
p
= 100 s
t
p
/T = 0.001
Figure 4. Forward Current vs. Forward Voltage
0
20
T
amb
– Ambient Temperature (
°
C )
40
60
80
0.7
0.8
0.9
1.0
1.1
1.2
V
F
100
94 7990 e
I
F
= 10 mA
Figure 5. Relative Forward Voltage vs. Ambient Temperature
96 11989
10
3
10
1
I
F
– Forward Current ( mA )
10
2
10
4
10
0
0.1
1
10
1000
100
I
e
Figure 6. Radiant Intensity vs. Forward Current
e
I
F
– Forward Current ( mA )
96 11990
10
3
10
1
10
2
10
4
10
0
0.1
1
10
1000
100
Figure 7. Radiant Power vs. Forward Current
–10
10
50
0
100
0
0.4
0.8
1.2
1.6
I
e
T
amb
– Ambient Temperature (
°
C )
140
94 7993 e
I
F
= 20 mA
Figure 8. Rel. Radiant Intensity\Power vs.
Ambient Temperature
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