參數(shù)資料
型號： TSIL6400
英文描述： GaAs/GaAlAs IR Emitting Diodes in ┆ 5 mm Package
中文描述： 砷化鎵/紅外發(fā)光二極管的GaAIAs 5毫米封裝在┆
文件頁數(shù)： 2/5頁
文件大?。?/td> 114K
代理商： TSIL6400
TSIL6400
TELEFUNKEN Semiconductors
Rev. A1, 18-Oct-96
2 (5)
Basic Characteristics
T
amb
= 25 C
Parameter
Test Conditions
I
F
= 100 mA, t
p
= 20 ms
I
F
= 1 A, t
p
= 100 s
I
F
= 100mA
V
R
= 5 V
V
R
= 0 V, f = 1 MHz, E = 0
I
F
=100mA, t
p
=20ms
I
F
=1.0A, t
p
=100 s
I
F
=100mA, t
p
=20ms
I
F
= 20 mA
Symbol
V
F
V
F
TK
VF
I
R
C
j
I
e
I
e
Min
Typ
1.35
2.3
–1.3
Max
1.8
3
Unit
V
V
mV/K
A
pF
mW/sr
mW/sr
mW
%/K
deg
nm
nm
nm/K
ns
ns
Forward Voltage
Temp. Coefficient of V
F
Reverse Current
Junction Capacitance
Radiant Intensity
100
25
25
200
25
–0.8
±
17
925
50
0.2
800
800
18
140
Radiant Power
Temp. Coefficient of
e
Angle of Half Intensity
Peak Wavelength
Spectral Bandwidth
Temp. Coefficient of
p
Rise Time
Fall Time
e
TK
e
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
p
TK
p
t
r
t
f
Typical Characteristics
(T
amb
= 25 C unless otherwise specified)
0
20
T
amb
– Ambient Temperature (
°
C )
40
60
80
0
50
100
150
200
250
P
V
100
94 7957 e
R
thJA
Figure 1. Power Dissipation vs. Ambient Temperature
0
20
T
amb
– Ambient Temperature (
°
C )
40
60
80
0
50
100
150
200
250
I
F
100
96 11986
R
thJA
Figure 2. Forward Current vs. Ambient Temperature
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