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參數(shù)資料
| 型號(hào)： | TSHG5510 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 激光器 |
| 英文描述： | TSHG5510 - High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero |
| 中文描述： | Infrared Emitters High Speed Emitter 5V 180mW 830nm 38Deg |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 85K |
| 代理商： | TSHG5510 |
TSHG5510
www.vishay.com
Vishay Semiconductors
Rev. 1.2, 23-Aug-11
2
Document Number: 81887
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 2 - Forward Current Limit vs. Ambient Temperature
0
20
40
60
80
100
120
140
160
180
200
0
10
20
30
40
50
60
70
80
90 100
21142
T
amb
- Ambient Temperature (°C)
P
V
R
thJA
= 230 K/W
0
20
40
60
80
100
120
0
10
20
30
40
50
60
70
80
90 100
T
amb
- Ambient Temperature (°C)
21143
I
F
R
thJA
= 230 K/W
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
I
F
= 100 mA, t
p
= 20 ms
I
F
= 450 mA, t
p
= 100 μs
TEST CONDITION
SYMBOL
V
F
V
F
V
F
TK
VF
I
R
C
j
I
e
I
e
φ
e
TK
φ
e
λ
p
Δλ
TK
λ
p
t
r
t
f
f
c
MIN.
1.3
1.5
TYP.
1.45
1.75
2.1
- 1.8
MAX.
1.7
2.1
UNIT
V
V
V
mV/K
μA
pF
mW/sr
mW/sr
mW
%/K
deg
nm
nm
nm/K
ns
ns
MHz
For
w
ard voltage
I
F
= 1 A, t
p
= 100 μs
I
F
= 1 mA
V
R
= 5 V
V
R
= 0 V, f = 1 MHz, E = 0
I
F
= 100 mA, t
p
= 20 ms
I
F
= 1 A, t
p
= 100 μs
I
F
= 100 mA, t
p
= 20 ms
I
F
= 100 mA
Temperature coefficient of V
F
Reverse c
u
rrent
J
u
nction capacitance
10
110
32
320
55
- 0.35
± 38
830
55
0.25
15
15
24
Radiant intensity
18
54
Radiant po
w
er
Temperature coefficient of
φ
e
Angle of half intensity
Peak
w
avelength
Spectral
b
and
w
idth
Temperature coefficient of
λ
p
Rise time
Fall time
C
u
t-off freq
u
ency
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
DC
= 70 mA, I
AC
= 30 mA pp
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