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參數(shù)資料
| 型號： | TSHG5510 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 激光器 |
| 英文描述： | TSHG5510 - High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero |
| 中文描述： | Infrared Emitters High Speed Emitter 5V 180mW 830nm 38Deg |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 85K |
| 代理商： | TSHG5510 |
TSHG5510
www.vishay.com
Vishay Semiconductors
Rev. 1.2, 23-Aug-11
1
Document Number: 81887
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
High Speed Infrared Emitting Diode, 830 nm,
GaAlAs Double Hetero
DESCRIPTION
TSHG5510 is an infrared, 830 nm emitting diode in GaAlAs
double hetero (DH) technology with high radiant power and
high speed, molded in a clear, untinted plastic package.
FEATURES
Package type: leaded
Package form: T-1
Dimensions (in mm): 5
Leads with stand-off
Peak wavelength:
λ
p
= 830 nm
High reliability
High radiant power
High radiant intensity
Angle of half intensity:
= ± 38°
Low forward voltage
Suitable for high pulse current operation
High modulation bandwidth: f
c
= 24 MHz
Good spectral matching to Si photodetectors
Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
APPLICATIONS
Infrared radiation source for operation with CMOS
cameras (illumination)
High speed IR data transmission
Note
Test conditions see table “Basic Characteristics“
Note
MOQ: minimum order quantity
21061
PRODUCT SUMMARY
COMPONENT
TSHG5510
I
e
(mW/sr)
32
(deg)
± 38
λ
p
(nm)
830
t
r
(ns)
15
ORDERING INFORMATION
ORDERING CODE
TSHG5510
PACKAGING
Bulk
REMARKS
PACKAGE FORM
T-1
MOQ: 4000 pcs, 4000 pcs/bulk
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
J-STD-051, leads 7 mm soldered on PCB
TEST CONDITION
SYMBOL
V
R
I
F
I
FM
I
FSM
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
VALUE
5
100
200
1
180
100
- 40 to + 85
- 40 to + 100
260
230
UNIT
V
mA
mA
A
mW
°C
°C
°C
°C
K/W
t
p
/T = 0.5, t
p
= 100 μs
t
p
= 100 μs
t
≤
5 s, 2 mm from case
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TSHG620 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero |
| TSHG6200 | 功能描述:紅外發(fā)射源 High Speed Emitter 5V 50mW 850nm 10 Deg RoHS:否 制造商:Fairchild Semiconductor 波長:880 nm 射束角:+/- 25 輻射強度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk |
| TSHG6200 | 制造商:Vishay Semiconductors 功能描述:IR Emitting Diode |
| TSHG6200_07 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero |
| TSHG6200_09 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero |
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