參數(shù)資料
型號: TSHA6203
廠商: VISHAY SEMICONDUCTORS
元件分類: 激光器
英文描述: LED IrLED 875nm 2-Pin T-1 3/4 Bulk
中文描述: Infrared Emitters 5V 25mW 875nm 12 Deg
文件頁數(shù): 1/6頁
文件大?。?/td> 99K
代理商: TSHA6203
TSHA6200, TSHA6201, TSHA6202, TSHA6203
www.vishay.com
Vishay Semiconductors
Rev. 1.9, 24-Aug-11
1
Document Number: 81021
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
Infrared Emitting Diode, 875 nm, GaAlAs
DESCRIPTION
The TSHA620. series are infrared, 875 nm emitting diodes in
GaAlAs technology, molded in a clear, untinted plastic
package.
FEATURES
Package type: leaded
Package form: T-1
Dimensions (in mm): 5
Peak wavelength:
λ
p
= 875 nm
High reliability
Angle of half intensity:
= ± 12°
Low forward voltage
Suitable for high pulse current operation
Good spectral matching with Si photodetectors
Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Note
**
Please see document “Vishay Material Category Policy”:
www.vishay.com/doc99902
APPLICATIONS
Infrared remote control and free air data transmission
systems
This emitter series is dedicated to systems with panes in
transmission space between emitter and detector,
because of the low absorbtion of 875 nm radiation in glass
Note
Test conditions see table “Basic Characteristics“
Note
MOQ: minimum order quantity
94 8389
PRODUCT SUMMARY
COMPONENT
TSHA6200
TSHA6201
TSHA6202
TSHA6203
I
e
(mW/sr)
40
50
60
65
(deg)
± 12
± 12
± 12
± 12
λ
p
(nm)
875
875
875
875
t
r
(ns)
600
600
600
600
ORDERING INFORMATION
ORDERING CODE
TSHA6200
TSHA6201
TSHA6202
TSHA6203
PACKAGING
Bulk
Bulk
Bulk
Bulk
REMARKS
PACKAGE FORM
T-1
T-1
T-1
T-1
MOQ: 4000 pcs, 4000 pcs/bulk
MOQ: 4000 pcs, 4000 pcs/bulk
MOQ: 4000 pcs, 4000 pcs/bulk
MOQ: 4000 pcs, 4000 pcs/bulk
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PDF描述
TSHA6202 TSHA6200, TSHA6201, TSHA6202, TSHA6203 - Infrared Emitting Diode, 875 nm, GaAlAs
TSHA6201 TSHA6200, TSHA6201, TSHA6202, TSHA6203 - Infrared Emitting Diode, 875 nm, GaAlAs
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