參數(shù)資料
型號(hào): TSHG8400
廠商: VISHAY SEMICONDUCTORS
元件分類: 激光器
英文描述: LED IrLED 830nm 2-Pin T-1 3/4 Bulk
中文描述: Infrared Emitters High Speed Emitter 5V 50mW 830nm 22 Deg
文件頁數(shù): 1/5頁
文件大小: 101K
代理商: TSHG8400
TSHG8400
www.vishay.com
Vishay Semiconductors
Rev. 1.3, 24-Aug-11
1
Document Number: 81297
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
High Speed Infrared Emitting Diode, 830 nm,
GaAlAs Double Hetero
DESCRIPTION
TSHG8400 is an infrared, 830 nm emitting diode in GaAlAs
double hetero (DH) technology with high radiant power and
high speed, molded in a clear, untinted plastic package.
FEATURES
Package type: leaded
Package form: T-1
Dimensions (in mm): 5
Peak wavelength:
λ
p
= 830 nm
High reliability
High radiant power
High radiant intensity
Angle of half intensity:
= ± 22°
Low forward voltage
Suitable for high pulse current operation
High modulation bandwidth: f
c
= 18 MHz
Good spectral matching with CMOS cameras
Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Note
**
Please see document “Vishay Material Category Policy”:
www.vishay.com/doc99902
APPLICATIONS
Infrared radiation source for operation with CMOS
cameras (illumination)
High speed IR data transmission
Note
Test conditions see table “Basic Characteristics”
Note
MOQ: minimum order quantity
94 8389
PRODUCT SUMMARY
COMPONENT
TSHG
8
400
I
e
(mW/sr)
70
(deg)
± 22
λ
p
(nm)
830
tr (ns)
20
ORDERING INFORMATION
ORDERING CODE
TSHG
8
400
PACKAGING
Bulk
REMARKS
PACKAGE FORM
T-1
MOQ: 4000 pcs, 4000 pcs/bulk
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Reverse voltage
Forward current
Peak forward current
t
p
/T = 0.5, t
p
= 100 μs
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
t
5 s, 2 mm from case
J-STD-051, leads 7 mm soldered
SYMBOL
V
R
I
F
I
FM
I
FSM
P
V
T
j
T
amb
T
stg
T
sd
VALUE
5
100
200
1
180
100
- 40 to + 85
- 40 to + 100
260
UNIT
V
mA
mA
A
mW
°C
°C
°C
°C
t
p
= 100 μs
Thermal resistance junction/ambient
on PCB
R
thJA
230
K/W
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