參數(shù)資料
型號: TSFF5210
廠商: VISHAY SEMICONDUCTORS
元件分類: 激光器
英文描述: LED IrLED 870nm 2-Pin T-1 3/4 Bulk
中文描述: Infrared Emitters 10 Degree 250mW 5 Volt 100mA
文件頁數(shù): 1/5頁
文件大?。?/td> 105K
代理商: TSFF5210
TSFF5210
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 24-Aug-11
1
Document Number: 81090
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
High Speed Infrared Emitting Diode, 870 nm,
GaAlAs Double Hetero
DESCRIPTION
TSFF5210 is an infrared, 870 nm emitting diode in GaAlAs
double hetero (DH) technology with high radiant power and
high speed, molded in a clear, untinted plastic package.
FEATURES
Package type: leaded
Package form: T-1 3/4
Dimensions (in mm): 5
Leads with stand-off
Peak wavelength:
p
= 870 nm
High reliability
High radiant power
High radiant intensity
Angle of half intensity:
= ± 10°
Low forward voltage
Suitable for high pulse current operation
High modulation bandwidth: f
c
= 24 MHz
Good spectral matching with Si photodetectors
Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Note
**
Please see document “Vishay Material Category Policy”:
www.vishay.com/doc99902
APPLICATIONS
Infrared video data transmission between camcorder and
TV set
Free air data transmission systems with high modulation
frequencies or high data transmission rate requirements
Smoke-automatic fire detectors
Note
Test conditions see table “Basic Characteristics”
Note
MOQ: minimum order quantity
94 8390
PRODUCT SUMMARY
COMPONENT
TSFF5210
I
e
(mW/sr)
180
(deg)
± 10
p
(nm)
870
t
r
(ns)
15
ORDERING INFORMATION
ORDERING CODE
TSFF5210
PACKAGING
Bulk
REMARKS
PACKAGE FORM
T-1
MOQ: 4000 pcs, 4000 pcs/bulk
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
TEST CONDITION
SYMBOL
V
R
I
F
I
FM
I
FSM
P
V
VALUE
5
100
200
1
180
UNIT
V
mA
mA
A
mW
t
p
/T = 0.5, t
p
= 100 μs
t
p
= 100 μs
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