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參數(shù)資料
| 型號： | TSFF5410 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 激光器 |
| 英文描述： | LED IrLED 870nm 2-Pin T-1 3/4 Bulk |
| 中文描述： | Infrared Emitters High Speed Emitter 5V 50mW 870nm 22 Deg |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 100K |
| 代理商： | TSFF5410 |
TSFF5410
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 24-Aug-11
1
Document Number: 81091
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
High Speed Infrared Emitting Diode, 870 nm,
GaAlAs Double Hetero
DESCRIPTION
TSFF5410 is an infrared, 870 nm emitting diode in GaAlAs
double hetero (DH) technology with high radiant power and
high speed, molded in a clear, untinted plastic package.
FEATURES
Package type: leaded
Package form: T-1
Dimensions (in mm): 5
Leads with stand-off
Peak wavelength:
p
= 870 nm
High reliability
High radiant power
High radiant intensity
Angle of half intensity:
= ± 22°
Low forward voltage
Suitable for high pulse current operation
High modulation bandwidth: f
c
= 24 MHz
Good spectral matching to Si photodetectors
Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Note
**
Please see document “Vishay Material Category Policy”:
www.vishay.com/doc99902
APPLICATIONS
Infrared video data transmission between camcorder and
TV set
Free air data transmission systems with high modulation
frequencies or high data transmission rate requirements
Note
Test conditions see table “Basic Characteristics”
Note
MOQ: minimum order quantity
94 8390
PRODUCT SUMMARY
COMPONENT
TSFF5410
I
e
(mW/sr)
70
(deg)
± 22
p
(nm)
870
t
r
(ns)
15
ORDERING INFORMATION
ORDERING CODE
TSFF5410
PACKAGING
Bulk
REMARKS
PACKAGE FORM
T-1
MOQ: 4000 pcs, 4000 pcs/bulk
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
TEST CONDITION
SYMBOL
V
R
I
F
I
FM
I
FSM
P
V
VALUE
5
100
200
1
180
UNIT
V
mA
mA
A
mW
t
p
/T = 0.5, t
p
= 100 μs
t
p
= 100 μs
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TSHA4400 | LED IrLED 875nm 2-Pin T-1 Bulk |
| TSHA4401 | LED IrLED 875nm 2-Pin T-1 Bulk |
| TSHA5201 | TSHA5200, TSHA5201, TSHA5202, TSHA5203 - Infrared Emitting Diode, 875 nm, GaAlAs |
| TSHA5200 | TSHA5200, TSHA5201, TSHA5202, TSHA5203 - Infrared Emitting Diode, 875 nm, GaAlAs |
| TSHA5203 | LED IrLED 875nm 2-Pin T-1 3/4 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TSFF5410_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:High Speed Infrared Emitting Diode, RoHS Compliant, 870 nm, GaAlAs Double Hetero |
| TSFF5410_09 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero |
| TSFF5410-ASZ | 制造商:Vishay Semiconductors 功能描述: 制造商:Vishay Intertechnologies 功能描述:OPTO |
| TSFF5410-ES12 | 功能描述:LED IRLED 870NM 2-PIN T-1 3/4 RoHS:是 類別:光電元件 >> 紅外發(fā)射極 系列:A850 標(biāo)準(zhǔn)包裝:1,200 系列:- 電流 - DC 正向(If):100mA 輻射強度(le)最小值@正向電流:27mW/sr @ 100mA 波長:940nm 正向電壓:1.6V 視角:40° 方向:頂視圖 安裝類型:通孔 封裝/外殼:徑向 包裝:帶卷 (TR) |
| TSFF5510 | 功能描述:紅外發(fā)射源 High Speed Emitter 5V 55mW 870nm 38 Deg RoHS:否 制造商:Fairchild Semiconductor 波長:880 nm 射束角:+/- 25 輻射強度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk |
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