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| 型號： | TSDF02830YL |
| 英文描述： | Analog Miscellaneous |
| 中文描述： | 模擬雜項 |
| 文件頁數(shù)： | 4/6頁 |
| 文件大小： | 175K |
| 代理商： | TSDF02830YL |
Document Number 85108
Rev. 1, 23-Oct-02
www.vishay.com
4
VISHAY
TSDF02830Y
Vishay Semiconductors
Remark on improving intermodulation behavior:
By setting R
G1
smaller than 56 k
, typical value of I
DSO
will raise and improved intermodulation behavior will be performed.
Amplifier 2
V
DS
= V
RG1
= 5 V, V
G2S
= 4 V, R
G1
= 100 k
, I
D
= I
DSO,
f = 1 MHz, T
amb
= 25 °C, unless otherwise specified
Following data are valid for operating amplifier 2 (pin 6, 4, 2, 5) which is optimized for UHF applications
Parameter
Test condition
Forward transadmittance
Remark on improving intermodulation behavior:
By setting R
G1
smaller than 100 k
, e. g. 68 k
typical value of I
DSO
will raise and improved intermodulation behavior will be performed.
Cross modulation
Input level for k = 1 % @ 0 dB AGC
f
w
= 50 MHz, f
unw
= 60 MHz
Input level for k = 1 % @ 40 dB
AGC f
w
= 50 MHz, f
unw
= 60 MHz
X
mod
90
dBμV
X
mod
105
dBμV
Symbol
|y
21s
|
C
issg1
C
rss
C
oss
G
ps
Min
27
Typ.
31
Max
35
Unit
mS
Gate 1 input capacitance
1.9
2.3
pF
Feedback capacitance
20
fF
Output capacitance
0.9
pF
Power gain
G
S
= 2 mS, B
S
= B
Sopt
, G
L
= 0.5
mS, B
L
= B
Lopt
, f = 200 MHz
G
S
= 2 mS, B
S
= B
Sopt
, G
L
= 1 mS,
B
L
= B
Lopt
, f = 400 MHz
G
S
= 3.3 mS, B
S
= B
Sopt
, G
L
= 1
mS, B
L
= B
Lopt
, f = 800 MHz
V
DS
= 5 V, V
G2S
= 0.5 to 4 V, f = 200
MHz
G
S
= G
L
= 20 mS, B
S
= B
L
= 0, f =
50 MHz
G
S
= 2 mS, G
L
= 1 mS, B
S
= B
Sopt
,
f = 400 MHz
G
S
= 3.3 mS, G
L
= 1 mS, B
S
=
B
Sopt
, f = 800 MHz
Input level for k = 1 % @ 0 dB AGC
f
w
= 50 MHz, f
unw
= 60 MHz
Input level for k = 1 % @ 40 dB
AGC f
w
= 50 MHz, f
unw
= 60 MHz
33
dB
G
ps
30
dB
G
ps
25
dB
AGC range
G
ps
50
dB
Noise figure
F
6.0
8.0
dB
F
1.0
1.5
dB
F
1.3
2.0
dB
Cross modulation
X
mod
90
dBμV
X
mod
100
105
dBμV
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
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