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| 型號： | TSDF02830YL |
| 英文描述： | Analog Miscellaneous |
| 中文描述： | 模擬雜項 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 175K |
| 代理商： | TSDF02830YL |
Document Number 85108
Rev. 1, 23-Oct-02
www.vishay.com
2
VISHAY
TSDF02830Y
Vishay Semiconductors
Parts Table
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Amplifier 1
Following data are valid for operating amplifier 1(pin 1, 3, 2, 5) which is optimized for VHF applications
Parameter
Test condition
Drain - source voltage
Amplifier 2
Following data are valid for operating amplifier 2 (pin 6, 4, 2, 5) which is optimized for UHF applications
Parameter
Test condition
Drain - source voltage
Electrical DC Characteristics
T
amb
= 25 °C, unless otherwise specified
Amplifier 1
Following data are valid for operating amplifier 1(pin 1, 3, 2, 5) which is optimized for VHF applications
Parameter
Test condition
Drain - source breakdown voltage
I
D
= 10 μA, V
G1S
= V
G2S
= 0
Gate 1 - source breakdown voltage + I
G1S
= 10 mA, V
G2S
= V
DS
= 0
Gate 2 - source breakdown voltage
±
I
G2S
= 10 mA, V
G1S
= V
DS
= 0
Part
Marking
Package
TSDF02830Y
WM2
SOT363
Symbol
V
DS
I
D
±
I
G1/G2SM
Value
8
Unit
V
Drain current
30
mA
Gate 1/Gate 2 - source peak
current
Gate 1 - source voltage
10
mA
+ V
G1SM
- V
G1SM
±
V
G2SM
P
tot
T
Ch
T
stg
R
thChA
6
V
1.5
V
Gate 2 - source voltage
6
V
Total power dissipation
T
amb
≤
60 °C
200
mW
Channel temperature
150
°C
Storage temperature range
- 55 to + 150
°C
Channel ambient
on glass fibre printed board (25 x
20 x 1.5) mm
3
plated with 35 μm
Cu
450
K/W
Symbol
V
DS
I
D
±
I
G1/G2SM
Value
8
Unit
V
Drain current
25
mA
Gate 1/Gate 2 - source peak
current
Gate 1 - source voltage
10
mA
+ V
G1SM
- V
G1SM
±
V
G2SM
P
tot
T
Ch
T
stg
R
thChA
6
V
1.5
V
Gate 2 - source voltage
6
V
Total power dissipation
T
amb
≤
60 °C
200
mW
Channel temperature
150
°C
Storage temperature range
- 55 to + 150
°C
Channel ambient
on glass fibre printed board (25 x
20 x 1.5) mm
3
plated with 35 μm
Cu
450
K/W
Symbol
V
(BR)DSS
+ V
(BR)G1SS
±
V
(BR)G2SS
Min
12
Typ.
Max
Unit
V
7
10
V
7
10
V
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