參數(shù)資料
型號(hào): TSD2931
廠商: 意法半導(dǎo)體
英文描述: RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs
中文描述: RF功率晶體管高頻/甚高頻/超高頻N溝道MOSFET
文件頁(yè)數(shù): 1/4頁(yè)
文件大?。?/td> 47K
代理商: TSD2931
SD2931
RF POWER TRANSISTORS
HF/VHF/UHF N-CHANNEL MOSFETs
TARGET DATA
I
GOLD METALLIZATION
I
EXCELLENT THERMAL STABILITY
I
COMMON SOURCE CONFIGURATION
I
POUT = 150W MIN. WITH 14 dB GAIN @175
MHz
DESCRIPTION
The SD2931 is a gold metallized N-Channel MOS
field-effect RF power transistor. The SD2931 is
intended for use in 50V dc large signal
applications up to 230 MHz
PIN CONNECTION
November 1999
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25
o
C)
Symbol
V
(BR)DSS
V
DGR
V
GS
I
D
P
DISS
T
j
T
STG
Parameter
Value
125
125
±
20
16
292
200
-65 to 150
Unit
V
V
V
A
W
o
C
o
C
Drain Source Voltage
Drain-Gate Voltage (R
GS
= 1M
)
Gate-Source Voltage
Drain Current
Power Dissipation
Max. Operating Junction Temperature
Storage Temperature
THERMAL DATA
R
th(j-c)
R
th(c-s)
* Determined using a flat aluminum or copper heatsink with thermal compound applied (Dow Corning 340 or equivalent).
Junction-Case Thermal Resistance
Case-Heatsink Thermal Resistance
0.6
0.2
o
C/W
o
C/W
M174
epoxy sealed
ORDER CODE BRANDING
SD2931 TSD2931
1. Drain 3.Gate
2. Source 4. Source
1/4
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相關(guān)代理商/技術(shù)參數(shù)
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