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參數(shù)資料
| 型號： | TSD2150ACY |
| 廠商： | Taiwan Semiconductor Co., Ltd. |
| 英文描述： | Low Vcesat NPN Transistor |
| 中文描述： | 低VCESAT NPN晶體管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 193K |
| 代理商： | TSD2150ACY |
TSD2150A
Low Vcesat NPN Transistor
1/4
Version: A07
SOT-89
PRODUCT SUMMARY
BV
CBO
BV
CEO
I
C
V
CE(SAT)
80V
50V
3A
0.5V @ I
C
/ I
B
= 2A / 200mA
Ordering Information
Part No.
TSD2150ACY RM
Features
●
●
Low V
CE(SAT)
0.1 @ I
C
/ I
B
= 1A / 50mA (Typ.)
Complementary part with TSB1424A
Structure
●
●
Epitaxial Planar Type
NPN Silicon Transistor
Package
SOT-89
Packing
1Kpcs / 7” Reel
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Symbol
V
CBO
V
CEO
V
EBO
Limit
80
50
3
6 (note1)
0.6
2 (note 2)
+150
- 55 to +150
Unit
V
V
V
DC
Pulse
Collector Current
I
C
A
Collector Power Dissipation
P
D
W
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Note: 1. Single pulse, Pw=10ms, Duty
≤
50%
2. When mounted on a 40 x 50 x 0.7mm ceramic board.
T
J
T
STG
o
C
o
C
Electrical Specifications
(Ta = 25
o
C unless otherwise noted)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Conditions
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(SAT)
V
CE(SAT)
V
BE(SAT)
h
FE
1
h
FE
2
h
FE
3
Min
80
50
6
--
--
--
--
--
180
200
150
Typ
--
--
--
--
--
0.1
0.25
--
--
--
--
Max
--
--
--
0.1
0.1
0.25
0.5
2
--
400
--
Unit
V
V
V
uA
uA
I
C
= 50uA, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 50uA, I
C
= 0
V
CB
= 60V, I
E
= 0
V
EB
= 3V, I
C
= 0
I
C
/ I
B
= 1A / 50mA
I
C
/ I
B
= 2A / 200mA
I
C
/ I
B
= 2A / 200mA
V
CE
= 2V, I
C
= 100mA
V
CE
= 2V, I
C
= 500mA
V
CE
= 2V, I
C
= 1A
V
CE
=5V, I
E
=0.1A,
f=100MHz
V
CB
= 10V, f=1MHz
Collector-Emitter Saturation Voltage
V
Base-Emitter Saturation Voltage
V
DC Current Transfer Ratio
Transition Frequency
f
T
--
90
--
MHz
Output Capacitance
Note: Pulse test: pulse width
≤
380uS, Duty cycle
≤
2%
Cob
--
45
--
pF
Pin Definition:
1. Base
2. Collector
3. Emitter
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