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參數(shù)資料
| 型號： | TSD2444CXP |
| 廠商： | Taiwan Semiconductor Co., Ltd. |
| 英文描述： | Low Vce(sat) NPN Transistor |
| 中文描述： | 低Vce（sat）NPN晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 45K |
| 代理商： | TSD2444CXP |
TSD2444
1-3
2003/12 rev. A
TSD2444
Low Vce(sat) NPN Transistor
BV
CEO
= 20V
Ic = 1A
V
CE (SAT)
, = 0.2V(typ.) @Ic / Ib = 0.5A / 50mA
Features
Low V
CE (SAT).
Excellent DC current gain characteristics
Structure
Epitaxial planar type.
Complementary to TSB1590CX
Absolute Maximum Rating
(Ta = 25
o
C
unless otherwise noted)
Ordering Information
Part No.
Packing
Package
TSD2444CX
Tape & Reel
SOT-23
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
Limit
40V
20V
5
1
1.5 (note 1)
0.225
Unit
V
V
V
A
DC
Pulse
Collector Power Dissipation
P
D
W
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Note: 1. Single pulse, Pw = 10mS
Electrical Characteristics
T
J
T
STG
+150
o
C
o
C
- 55 to +150
Ta = 25
o
C unless otherwise noted
Parameter
Static
Collector-Base Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Transition Frequency
Conditions
Symbol
Min
Typ
Max
Unit
I
C
= 10uA, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10uA, I
C
= 0
V
CB
= 20V, I
E
= 0
V
EB
= 4V, I
C
= 0
I
C
/ I
B
= 500mA / 50mA
V
CE
= 2V, I
C
= 0.1A
V
CE
= 5V, I
C
= 50mA,
f = 100MHz
V
CB
= 10V, f=1MHz
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(SAT)
h
FE
f
T
40
20
5
--
--
--
82
--
--
--
--
--
--
0.2
--
150
--
--
--
0.5
0.5
0.4
390
--
V
V
V
uA
uA
V
MHz
Output Capacitance
Note : pulse test: pulse width <=380uS, duty cycle <=2%
Classification Of h
FE
Rank
P
Range
82 - 180
Cob
--
15
--
pF
Q
R
120 - 270
180 - 390
Pin assignment:
1. Base
2. Emitter
3. Collector
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