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參數(shù)資料
| 型號： | TSD2118CP |
| 廠商： | Taiwan Semiconductor Co., Ltd. |
| 英文描述： | Low Vcesat NPN Transistor |
| 中文描述： | 低VCESAT NPN晶體管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 191K |
| 代理商： | TSD2118CP |
TSD2118
Low Vcesat NPN Transistor
1/4
Version: A07
TO-252
(DPAK)
PRODUCT SUMMARY
BV
CBO
BV
CEO
I
C
V
CE(SAT)
50V
20V
5A
1V @ I
C
/ I
B
= 4A / 100mA
Ordering Information
Part No.
TSD2118CP RO
Features
●
●
Low V
CE(SAT)
-0.35 @ I
C
/ I
B
= 4A / 100mA (Typ.)
Complementary part with TSB1412
Structure
●
●
Epitaxial Planar Type
NPN Silicon Transistor
Package
TO-252
Packing
2.5Kpcs / 13” Reel
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Symbol
V
CBO
V
CEO
V
EBO
Limit
50
20
6
5
10 (note 1)
1 (note 2)
10
+150
- 55 to +150
Unit
V
V
V
DC
Pulse
Ta=25oC
Tc=25oC
Collector Current
I
C
A
Collector Power Dissipation
P
D
W
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Note: 1. Single pulse, Pw
≤
380us, Duty
≤
2%
2. When mounted on a 40 x 40 x 0.7mm ceramic board.
T
J
T
STG
o
C
o
C
Electrical Specifications
(Ta = 25
o
C unless otherwise noted)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Conditions
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(SAT)
*h
FE
Min
50
20
6
--
--
--
120
Typ
--
--
--
--
--
0.35
--
Max
--
--
--
0.5
0.5
1
560
Unit
V
V
V
uA
uA
V
I
C
= 50uA, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 50uA, I
C
= 0
V
CB
= 40V, I
E
= 0
V
EB
= 5V, I
C
= 0
I
C
/ I
B
= 4A / 100mA
V
CE
= 2V, I
C
= 500mA
V
CE
=6V, I
C
=50mA,
f=100MHz
V
CB
= 20V, f=1MHz
Transition Frequency
f
T
--
150
--
MHz
Output Capacitance
* Pulse Test: Pulse Width
≤
380uS, Duty Cycle
≤
2%
Cob
--
35
--
pF
Pin Definition:
1. Base
2. Collector
3. Emitter
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