參數(shù)資料
型號: TSC5304D
廠商: Taiwan Semiconductor Co., Ltd.
英文描述: High Voltage NPN Transistor with Diode
中文描述: 高壓NPN晶體管,二極管
文件頁數(shù): 1/3頁
文件大?。?/td> 88K
代理商: TSC5304D
Preliminary
TS5304D Preliminary
1-1
2004/09 rev. A
TSC5304D
High Voltage NPN Transistor with Diode
Pin assignment:
1. Base
2. Collector
3. Emitter
BV
CEO
= 400V
BV
CBO
= 750V
Ic = 4A
V
CE (SAT)
, = 1.2V @ Ic / Ib = 4A / 1A
Ordering Information
Part No.
Packing
Package
TSC5304DCH
Tube
TO-251
TSC5304DCP
T&R
TO-252
Features
Built-in free-wheeling diode makes efficient anti
saturation operation.
No need to interest an hfe value because of low variable
storage-time spread even though comer spirit product.
Low base drive requirement.
Suitable for half bridge light ballast applications.
Structure
Silicon triple diffused type.
NPN silicon transistor with Diode
Block Diagram
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Collector-Base Voltage
V
CBO
750V
V
Collector-Emitter Voltage
V
CEO
400V
V
Emitter-Base Voltage
V
EBO
10
V
DC
4
Collector Current
Pulse
I
C
8
A
DC
1.5
Base Current
Pulse
I
B
4
A
Total Power Dissipation (Tc=25
o
C)
P
D
35
W
Operating Junction Temperature
T
J
+150
o
C
Operating Junction and Storage Temperature Range
T
STG
- 65 to +150
o
C
Thermal Resistance Junction to Case
R
Θ
jc
6
o
C/W
Thermal Resistance Junction to Ambient
Note: 1. Single pulse, Pw = 300uS, Duty <= 2%
R
Θ
ja
90
o
C/W
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