參數(shù)資料
型號(hào)： TSC5305DCM
廠商： Taiwan Semiconductor Co., Ltd.
英文描述： High Voltage NPN Transistor with Diode
中文描述： 高壓NPN晶體管，二極管
文件頁(yè)數(shù)： 1/3頁(yè)
文件大?。?/td> 90K
代理商： TSC5305DCM
Preliminary
TS5305D Preliminary
1-1
2004/09 rev. B
TSC5305D
High Voltage NPN Transistor with Diode
Pin assignment:
1. Base
2. Collector
3. Emitter
BV
CEO
= 400V
BV
CBO
= 750V
Ic = 5A
V
CE (SAT)
, = 1.2V @ Ic / Ib = 4A / 1A
Ordering Information
Part No.
Packing
Package
TSC5305DCZ
Tube
TO-220
TSC5305DCM
T&R
TO-263
Features
Built-in free-wheeling diode makes efficient anti
saturation operation.
No need to interest an hfe value because of low variable
storage-time spread even though comer spirit product.
Low base drive requirement.
Suitable for half bridge light ballast applications.
Structure
Silicon triple diffused type.
NPN silicon transistor with Diode
Block Diagram
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Collector-Base Voltage
V
CBO
750V
V
Collector-Emitter Voltage
V
CEO
400V
V
Emitter-Base Voltage
V
EBO
10
V
DC
5
Collector Current
Pulse
I
C
10
A
DC
2
Base Current
Pulse
I
B
4
A
Total Power Dissipation (Tc=25
o
C)
P
D
75
W
Operating Junction Temperature
T
J
+150
o
C
Operating Junction and Storage Temperature Range
T
STG
- 65 to +150
o
C
Thermal Resistance Junction to Case
R
Θ
jc
1.65
o
C/W
Thermal Resistance Junction to Ambient
Note: 1. Single pulse, Pw = 300uS, Duty <= 2%
R
Θ
ja
65
o
C/W
TO-263
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TSC5305DCZ 制造商:TSC 制造商全稱:Taiwan Semiconductor Company, Ltd 功能描述:High Voltage NPN Transistor with Diode
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