參數(shù)資料
型號(hào)： TSC5302DCP
廠商： Taiwan Semiconductor Co., Ltd.
英文描述： High Voltage NPN Transistor with Diode
中文描述： 高壓NPN晶體管，二極管
文件頁(yè)數(shù)： 1/5頁(yè)
文件大?。?/td> 106K
代理商： TSC5302DCP
Preliminary
TS5302D Preliminary
1-1
2004/09 rev. A
TSC5302D
High Voltage NPN Transistor with Diode
Pin assignment:
1. Base
2. Collector
3. Emitter
BV
CEO
= 400V
BV
CBO
= 800V
Ic = 2A
V
CE (SAT)
, = 1.0V @ Ic / Ib = 1A / 0.2A
Ordering Information
Part No.
Packing
Package
TSC5302DCH
Tube
TO-251
TSC5302DCP
T&R
TO-252
Features
Built-in free-wheeling diode makes efficient anti
saturation operation.
No need to interest an hfe value because of low variable
storage-time spread even though comer spirit product.
Low base drive requirement.
Suitable for half bridge light ballast applications.
Structure
Silicon triple diffused type.
NPN silicon transistor with Diode
Block Diagram
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Collector-Base Voltage
V
CBO
800V
V
Collector-Emitter Voltage
V
CEO
400V
V
Emitter-Base Voltage
V
EBO
10
V
DC
2
Collector Current
Pulse
I
C
4
A
DC
1
Base Current
Pulse
I
B
2
A
TO-251
75
Collector Power Dissipation (Tc=25
o
C)
TO-252
P
D
1.5
W
Operating Junction Temperature
T
J
+150
o
C
Operating Junction and Storage Temperature Range
T
STG
- 65 to +150
o
C
Thermal Resistance Junction to Case
R
Θ
jc
6.25
o
C/W
Thermal Resistance Junction to Ambient
Note: 1. Single pulse, Pw = 300uS, Duty <= 2%
R
Θ
ja
100
o
C/W
相關(guān)PDF資料
PDF描述
TSC5302D High Voltage NPN Transistor with Diode
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TSC5302DCP R0 制造商:SKMI/Taiwan 功能描述:TO-252;NPN TRANSISTOR
TSC5302DCPRO 制造商:TSC 制造商全稱:Taiwan Semiconductor Company, Ltd 功能描述:High Voltage NPN Transistor with Diode
TSC5302DCPROG 制造商:TSC 制造商全稱:Taiwan Semiconductor Company, Ltd 功能描述:High Voltage NPN Transistor with Diode
TSC5303D 制造商:TSC 制造商全稱:Taiwan Semiconductor Company, Ltd 功能描述:High Voltage NPN Transistor with Diode
TSC5303DCH C5 功能描述:兩極晶體管 - BJT High voltage NPN Transistor w/diode RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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