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參數(shù)資料
| 型號(hào)： | TSC2411CXQ |
| 廠商： | Taiwan Semiconductor Co., Ltd. |
| 英文描述： | General Purpose NPN Transistor |
| 中文描述： | 通用NPN晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 44K |
| 代理商： | TSC2411CXQ |
TSC2411
1-1
2003/12 rev. B
TSC2411
General Purpose NPN Transistor
BV
CEO
= 40V
Ic = 600mA
V
CE (SAT)
, = 0.2V(typ.) @Ic / Ib = 500mA / 50mA
Features
Driver stage of AF amplifier
.
General purpose switching application
Structure
Epitaxial planar type.
Complementary to TSA1036CX
Absolute Maximum Rating
(Ta = 25
o
C
unless otherwise noted)
Ordering Information
Part No.
Packing
Package
Marking
TSC2411CX
3kpcs / Reel SOT-23
2X
Parameter
Symbol
Limit
Unit
Collector-Base Voltage
V
CBO
V
CEO
V
EBO
I
C
P
D
T
J
T
STG
60V
V
Collector-Emitter Voltage
40V
V
Emitter-Base Voltage
6
V
Collector Current
0.6
A
Collector Power Dissipation
225
mW
Operating Junction Temperature
+150
o
C
Operating Junction and Storage Temperature Range
Note: 1. Single pulse, Pw = 380uS, Duty <= 2%
Electrical Characteristics
- 55 to +150
o
C
Ta = 25
o
C unless otherwise noted
Parameter
Static
Collector-Base Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Transition Frequency
Output Capacitance
Note : pulse test: pulse width <=380uS, duty cycle <=2%
Classification Of h
FE
Rank
P
Range
82 - 180
Conditions
Symbol
Min
Typ
Max
Unit
I
C
= 100uA, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10uA, I
C
= 0
V
CB
= 20V, I
E
= 0
V
EB
= 4V, I
C
= 0
I
C
/ I
B
= 150mA / 15mA
I
C
/ I
B
= 500mA / 50mA
V
CE
= 1V, I
C
= 0.15A
V
CE
=10V, I
C
=20mA, f=100MHz
V
CB
= 5V, f=1MHz
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(SAT)1
V
CE(SAT)2
h
FE
f
T
Cob
60
40
6
--
--
--
--
82
--
--
--
--
--
--
--
--
--
--
--
0.1
0.1
0.4
0.75
390
--
6.5
V
V
V
uA
uA
V
V
MHz
pF
0.20
--
250
--
Q
R
120 - 270
180 - 390
Pin assignment:
1. Base
2. Emitter
3. Collector
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