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參數(shù)資料
| 型號(hào)： | TSC2412CXT |
| 廠商： | Taiwan Semiconductor Co., Ltd. |
| 英文描述： | CAP 330PF 250VAC CERAMIC SMD |
| 中文描述： | 通用NPN晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 44K |
| 代理商： | TSC2412CXT |
TSC2412
1-1
2003/12 rev. A
TSC2412
General Purpose NPN Transistor
BV
CEO
= 50V
Ic = 150mA
V
CE (SAT)
, = 0.2V(typ.) @Ic / Ib = 50mA / 5mA
Features
Driver stage of AF amplifier
.
General purpose switching application
Structure
Epitaxial planar type.
Complementary to TSA1037CX
Absolute Maximum Rating
(Ta = 25
o
C
unless otherwise noted)
Ordering Information
Part No.
Packing
Package
Marking
TSC2412CX
3kpcs / Reel SOT-23
C4
Parameter
Symbol
Limit
Unit
Collector-Base Voltage
V
CBO
V
CEO
V
EBO
I
C
P
D
T
J
T
STG
60V
V
Collector-Emitter Voltage
50V
V
Emitter-Base Voltage
7
V
Collector Current
150
mA
Collector Power Dissipation
225
mW
Operating Junction Temperature
+150
o
C
Operating Junction and Storage Temperature Range
Note: 1. Single pulse, Pw = 380uS, Duty <= 2%
Electrical Characteristics
- 55 to +150
o
C
Ta = 25
o
C unless otherwise noted
Parameter
Static
Collector-Base Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Transition Frequency
Output Capacitance
Note : pulse test: pulse width <=380uS, duty cycle <=2%
Classification Of h
FE
Rank
R
Range
180 - 390
Note: * is Typical
Conditions
Symbol
Min
Typ
Max
Unit
I
C
= 100uA, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 50uA, I
C
= 0
V
CB
= 60V, I
E
= 0
V
EB
= 7V, I
C
= 0
I
C
/ I
B
= 50mA / 5mA
V
CE
= 6V, I
C
= 1mA
V
CE
=12V, I
C
=2mA, f=100MHz
V
CB
= 5V, f=1MHz
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(SAT)1
h
FE
f
T
Cob
60
50
7
--
--
--
180
80
--
--
--
--
--
--
0.2
--
180
2
--
--
--
0.1
0.1
0.4
820
--
3.5
V
V
V
uA
uA
V
MHz
pF
S*
T
270 – 560
410 - 820
Pin assignment:
1. Base
2. Emitter
3. Collector
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