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參數(shù)資料
| 型號： | TSB1664CYQ |
| 廠商： | Taiwan Semiconductor Co., Ltd. |
| 英文描述： | Low Frequency NPN Transistor |
| 中文描述： | 低頻NPN晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 48K |
| 代理商： | TSB1664CYQ |
TSB1664
1-3
2003/12 rev. A
TSD1664
Low Frequency NPN Transistor
BV
CEO
= 20V
Ic = 800mA
V
CE (SAT)
, = 0.15V(typ.) @Ic / Ib = 400mA / 20mA
Features
Low V
CE (SAT).
Excellent DC current gain characteristics
Structure
Epitaxial planar type.
NPN silicon transistor
Absolute Maximum Rating
(Ta = 25
o
C
unless otherwise noted)
Ordering Information
Part No.
Packing
Package
TSB1664CY
Tape & Reel
SOT-89
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
Limit
40V
20V
5
0.8
1.5 (note 1)
0.5
2 (note 2)
+150
- 55 to +150
Unit
V
V
V
A
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
SOT-89
Collector Power Dissipation
P
D
W
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Note: 1. Single pulse, Pw = 20mS, Duty <= 50%
2. When mounted on a 40 x 40 x 0.7mm ceramic board
Electrical Characteristics
T
J
T
STG
o
C
o
C
Ta = 25
o
C unless otherwise noted
Parameter
Static
Collector-Base Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Transition Frequency
Output Capacitance
Note : pulse test: pulse width <=380uS, duty cycle <=2%
Classification Of h
FE
Rank
P
Range
82 - 180
Conditions
Symbol
Min
Typ
Max
Unit
I
C
= 10uA, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10uA, I
C
= 0
V
CB
= 20V, I
E
= 0
V
EB
= 4V, I
C
= 0
I
C
/ I
B
= 400mA / 20mA
I
C
/ I
B
= 800mA / 80mA
V
CE
= 2V, I
C
= 0.1A
V
CE
=5V, I
C
=50mA, f=100MHz
V
CB
= 10V, f=1MHz
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(SAT)1
V
CE(SAT)2
h
FE
f
T
Cob
40
20
5
82
V
V
V
uA
uA
V
V
MHz
pF
0.5
0.5
0.3
0.5
560
30
0.15
0.25
150
20
Q
R
S
120 - 270
180 - 390
270 - 560
Pin assignment:
1. Base
2. Collector
3. Emitter
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