參數(shù)資料
型號(hào)： TSD1664
廠商： Taiwan Semiconductor Co., Ltd.
英文描述： Low Frequency NPN Transistor
中文描述： 低頻NPN晶體管
文件頁(yè)數(shù)： 1/3頁(yè)
文件大?。?/td> 48K
代理商： TSD1664
TSB1664
1-3
2003/12 rev. A
TSD1664
Low Frequency NPN Transistor
BV
CEO
= 20V
Ic = 800mA
V
CE (SAT)
, = 0.15V(typ.) @Ic / Ib = 400mA / 20mA
Features
Low V
CE (SAT).
Excellent DC current gain characteristics
Structure
Epitaxial planar type.
NPN silicon transistor
Absolute Maximum Rating
(Ta = 25
o
C
unless otherwise noted)
Ordering Information
Part No.
Packing
Package
TSB1664CY
Tape & Reel
SOT-89
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
Limit
40V
20V
5
0.8
1.5 (note 1)
0.5
2 (note 2)
+150
- 55 to +150
Unit
V
V
V
A
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
SOT-89
Collector Power Dissipation
P
D
W
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Note: 1. Single pulse, Pw = 20mS, Duty <= 50%
2. When mounted on a 40 x 40 x 0.7mm ceramic board
Electrical Characteristics
T
J
T
STG
o
C
o
C
Ta = 25
o
C unless otherwise noted
Parameter
Static
Collector-Base Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Transition Frequency
Output Capacitance
Note : pulse test: pulse width <=380uS, duty cycle <=2%
Classification Of h
FE
Rank
P
Range
82 - 180
Conditions
Symbol
Min
Typ
Max
Unit
I
C
= 10uA, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10uA, I
C
= 0
V
CB
= 20V, I
E
= 0
V
EB
= 4V, I
C
= 0
I
C
/ I
B
= 400mA / 20mA
I
C
/ I
B
= 800mA / 80mA
V
CE
= 2V, I
C
= 0.1A
V
CE
=5V, I
C
=50mA, f=100MHz
V
CB
= 10V, f=1MHz
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(SAT)1
V
CE(SAT)2
h
FE
f
T
Cob
40
20
5
82
V
V
V
uA
uA
V
V
MHz
pF
0.5
0.5
0.3
0.5
560
30
0.15
0.25
150
20
Q
R
S
120 - 270
180 - 390
270 - 560
Pin assignment:
1. Base
2. Collector
3. Emitter
相關(guān)PDF資料
PDF描述
TSB1664CY Low Frequency NPN Transistor
TSB772S Low Vce(sat) PNP Transistor
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TSB772SCY Low Vce(sat) PNP Transistor
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TSD1664_07 制造商:TSC 制造商全稱:Taiwan Semiconductor Company, Ltd 功能描述:Low Vcesat NPN Transistor
TSD1664_08 制造商:TSC 制造商全稱:Taiwan Semiconductor Company, Ltd 功能描述:Low Vcesat NPN Transistor
TSD1664CW 制造商:TSC 制造商全稱:Taiwan Semiconductor Company, Ltd 功能描述:Low Vcesat NPN Transistor
TSD1664CY 功能描述:兩極晶體管 - BJT NPN Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
TSD1664CY RM 制造商:SKMI/Taiwan 功能描述:LOW VCESAT NPN TRANSISTOR
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