
TSB1424
Low Vcesat PNP Transistor
1/4
Version: A07
SOT-89
PRODUCT SUMMARY
BV
CBO
BV
CEO
I
C
V
CE(SAT)
-20V
-20V
-3A
-0.2V @ I
C
/ I
B
= -2A / -100mA
Ordering Information
Part No.
TSB1424CY RM
Features
●
●
Low V
CE(SAT)
-0.2 @ I
C
/ I
B
= -2A / -100mA (Typ.)
Complementary part with TSD2150
Structure
●
●
Epitaxial Planar Type
PNP Silicon Transistor
Package
SOT-89
Packing
1Kpcs / 7” Reel
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Symbol
V
CBO
V
CEO
V
EBO
Limit
-20
-20
-6
-3
-5 (note1)
0.6
2 (note 2)
+150
- 55 to +150
Unit
V
V
V
DC
Pulse
Collector Current
I
C
A
Collector Power Dissipation
P
D
W
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Note: 1. Single pulse, Pw=10ms, Duty
≤
50%
2. When mounted on a 40 x 50 x 0.7mm ceramic board.
T
J
T
STG
o
C
o
C
Electrical Specifications
(Ta = 25
o
C unless otherwise noted)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Conditions
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(SAT)
h
FE
Min
-20
-20
-6
--
--
--
120
Typ
--
--
--
--
--
-0.2
--
Max
--
--
--
-0.1
-0.1
-0.5
390
Unit
V
V
V
uA
uA
V
I
C
= -50uA, I
E
= 0
I
C
= -10mA, I
B
= 0
I
E
= -50uA, I
C
= 0
V
CB
= -20V, I
E
= 0
V
EB
= -5V, I
C
= 0
I
C
/ I
B
= -2A / -100mA
V
CE
= -2V, I
C
= 100mA
V
CE
=-2V, I
E
=0.5A,
f=100MHz
V
CB
= -10V, I
E
= 0, f=1MHz
Transition Frequency
f
T
--
200
--
MHz
Output Capacitance
Cob
--
28
--
pF
h
FE
values are classified as follows:
Rank
Q
h
FE
120~270
R
180~390
Pin Definition:
1. Base
2. Collector
3. Emitter