參數(shù)資料
型號： TS86101G2BMGS
廠商： E2V TECHNOLOGIES PLC
元件分類： DAC
英文描述： PARALLEL, WORD INPUT LOADING, 10-BIT DAC, CBGA255
封裝： CI-CGA, 255 PIN
文件頁數(shù)： 54/57頁
文件大?。?/td> 1030K
代理商： TS86101G2BMGS
6
0992D–BDC–04/09
TS86101G2B
e2v semiconductors SAS 2009
Single tone
Spurious free dynamic range in third Nyquist zone
assuming an Fs/4 bandwidth centered around 5 Fs/4,
with a sin x/x pre-compensation for a constant output
power of –12.3 dBm over the band of interest): see Figure 3-6 on
Fs = 1.2 Gsps; Fout = Fs + 150 MHz = 1350 MHz
Fs = 1.2 Gsps; Fout = Fs + 450 MHz = 1650 MHz
IF SFDR
4
36
65
39
59
40
69
43
63
dBc
dBFS
dBc
dBFS
SFDR sensitivity over temperature and power supplies range
4
±3
dB
Signal independent spur (clock-related spur)
Fs = 1.2 Gsps:
Fs/4 power level (first Nyquist zone)
Fs/2 Power level (first Nyquist zone)
4
–80
–72
dBm
Signal-to-noise ratio (DC to Nyquist)
Fs = 1.2 Gsps; Fout = 375 MHz (–15 dBFS)
SNR
4
58
60
dBFS
Multi-tone inter-modulation:
Fs = 1.2 Gsps
Four tones at 100 MHz spacing (150 to 450 MHz)
(–12 dBFS)
Eight tones at 62.5 MHz spacing (80 to 517.5 MHz)
(–18 dBFS)
IMD
4
63
65
68
70
dBFS
Broadband noise power ratio:
At –12 dBFS peak to rms optimum loading factor
Fs = 1.2 Gsps, 20 to 580 MHz broadband
pattern, 25 MHz
Notch centered around 250 MHz
NPR
4
47
49
dB
DC Accuracy
Differential non-linearity
DNL+
4
0.25
LSB
Differential non-linearity
DNL-
4
–0.25
LSB
Integral non-linearity
INL+
4
0.25
LSB
Integral non-linearity
INL-
4
–0.25
LSB
DC gain
- Initial gain error(3)
- DC gain dispersion(4)
- DC gain sensitivity to power supplies
- DC gain drift over temperature
1
4
±3.5%
±2.3%
±1.5%
–400
%FS
ppm/
°C
Mid-scale output voltage
5
–600
mV
Table 2-3.
Electrical Operating Characteristics: V
CCD = 5V, VEEA and VEED = –5V, LVDS Input Level, TJ = 85°C
(Continued)
Parameter
Symbol
Test
Level
Min
Typ
Max
Unit
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