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參數(shù)資料
| 型號： | TS820-700T-TR |
| 廠商： | 意法半導體 |
| 英文描述： | 8A SCRs |
| 中文描述： | 8A條可控硅 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 162K |
| 代理商： | TS820-700T-TR |
TN8, TS8 and TYNx08 Series
2/9
/T
ELECTRICAL CHARACTERISTICS
(Tj = 25°C, unless otherwise specified)
I
SENSITIVE
Symbol
I
STANDARD
Symbol
THERMAL RESISTANCES
S= copper surface under tab
Test Conditions
TS820
Unit
I
GT
V
D
= 12 V R
L
= 140
MAX.
200
μA
V
GT
V
GD
V
RG
I
H
I
L
dV/dt
MAX.
0.8
V
V
D
= V
DRM
R
L
= 3.3 k
R
GK
= 220
I
RG
= 10
μ
A
I
T
= 50 mA R
GK
= 1 k
I
G
= 1 mA R
GK
= 1 k
V
D
= 65 % V
DRM
R
GK
= 220
I
TM
= 16 A tp = 380 μs
Tj = 125°C
MIN.
0.1
V
MIN.
8
V
MAX.
5
mA
MAX.
6
mA
Tj = 125°C
MIN.
5
V/μs
V
TM
V
t0
R
d
I
DRM
I
RRM
Tj = 25°C
MAX.
1.6
V
Threshold voltage
Tj = 125°C
MAX.
0.85
V
Dynamic resistance
Tj = 125°C
MAX.
46
m
μA
V
DRM
= V
RRM
R
GK
= 220
Tj = 25°C
MAX.
5
Tj = 125°C
1
mA
Test Conditions
TN805 TN815
TYNx08
Unit
I
GT
V
D
= 12 V R
L
= 33
MIN.
MAX.
0.5
5
2
2
mA
15
15
V
GT
V
GD
MAX.
1.3
V
V
D
= V
DRM
R
L
= 3.3 k
Tj = 125°C
MIN.
0.2
V
I
H
I
L
I
T
= 100 mA Gate open
MAX.
25
40
30
mA
I
G
= 1.2 I
GT
MAX.
30
50
70
mA
dV/dt
V
TM
V
t0
R
d
I
DRM
I
RRM
V
D
= 67 % V
DRM
Gate open
I
TM
= 16 A tp = 380 μs
Tj = 125°C
MIN.
50
150
150
V/μs
Tj = 25°C
MAX.
1.6
V
Threshold voltage
Tj = 125°C
MAX.
0.85
V
Dynamic resistance
Tj = 125°C
MAX.
46
m
V
DRM
= V
RRM
Tj = 25°C
MAX.
5
μA
mA
Tj = 125°C
2
Symbol
Parameter
Value
Unit
R
th(j-c)
R
th(j-a)
Junction to case (DC)
20
°C/W
Junction to ambient (DC)
TO-220AB
IPAK
60
100
°C/W
S = 0.5 cm
2
DPAK
70
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