參數(shù)資料
型號： TS80C51RA2-VIA
廠商： Atmel
文件頁數(shù)： 68/84頁
文件大?。?/td> 0K
描述： IC MCU 8BIT 256BYTE 40MHZ 40-DIP
標(biāo)準(zhǔn)包裝： 9
系列： 80C
核心處理器： 8051
芯體尺寸： 8-位
速度： 40/30MHz
連通性： UART/USART
外圍設(shè)備： POR，PWM，WDT
輸入/輸出數(shù)： 32
程序存儲器類型： ROMless
RAM 容量： 256 x 8
電壓 - 電源 (Vcc/Vdd)： 4.5 V ~ 5.5 V
振蕩器型： 內(nèi)部
工作溫度： -40°C ~ 85°C
封裝/外殼： 40-DIP（0.600"，15.24mm）
包裝： 管件
dsPIC33FJ32GP302/304, dsPIC33FJ64GPX02/X04, AND dsPIC33FJ128GPX02/X04
DS70292G-page 72
2007-2012 Microchip Technology Inc.
5.2
RTSP Operation
The dsPIC33FJ32GP302/304, dsPIC33FJ64GPX02/
X04, and dsPIC33FJ128GPX02/X04 Flash program
memory array is organized into rows of 64 instructions
or 192 bytes. RTSP allows the user application to erase
a page of memory, which consists of eight rows (512
instructions) at a time, and to program one row or one
word at a time. Table 30-12 shows typical erase and
programming times. The 8-row erase pages and single
row write rows are edge-aligned from the beginning of
program memory, on boundaries of 1536 bytes and
192 bytes, respectively.
The program memory implements holding buffers that
can contain 64 instructions of programming data. Prior
to the actual programming operation, the write data
must be loaded into the buffers sequentially. The
instruction words loaded must always be from a group
of 64 boundary.
The basic sequence for RTSP programming is to set up
a Table Pointer, then do a series of TBLWT instructions
to load the buffers. Programming is performed by
setting the control bits in the NVMCON register. A total
of 64 TBLWTL and TBLWTH instructions are required
to load the instructions.
All of the table write operations are single-word writes
(two instruction cycles) because only the buffers are
written. A programming cycle is required for
programming each row.
5.3
Programming Operations
A complete programming sequence is necessary for
programming or erasing the internal Flash in RTSP
mode.
The
processor stalls (waits)
until
the
programming operation is finished.
The programming time depends on the FRC accuracy
(see Table 30-19) and the value of the FRC Oscillator
Tuning register (see Register 9-4). Use the formula in
Equation 5-1 to calculate the minimum and maximum
values for the Row Write Time, Page Erase Time and
Word Write Cycle Time parameters (see Table 30-12).
EQUATION 5-1:
PROGRAMMING TIME
For example, if the device is operating at +125°C,
the FRC accuracy will be ±5%. If the TUN<5:0> bits
(see Register 9-4) are set to ‘b111111, the
minimum row write time is equal to Equation 5-2.
EQUATION 5-2:
MINIMUM ROW WRITE
TIME
The maximum row write time is equal to Equation 5-3.
EQUATION 5-3:
MAXIMUM ROW WRITE
TIME
Setting the WR bit (NVMCON<15>) starts the
operation, and the WR bit is automatically cleared
when the operation is finished.
5.4
Control Registers
Two SFRs are used to read and write the program
Flash memory: NVMCON and NVMKEY.
The NVMCON register (Register 5-1) controls which
blocks are to be erased, which memory type is to be
programmed and the start of the programming cycle.
NVMKEY (Register 5-2) is a write-only register that is
used for write protection. To start a programming or
erase sequence, the user application must consecu-
tively write 0x55 and 0xAA to the NVMKEY register.
further details.
5.5
Flash Resources
Many useful resources related to Flash memory are
provided on the main product page of the Microchip
web site for the devices listed in this data sheet. This
product page, which can be accessed using this link,
contains the latest updates and additional information.
5.5.1
KEY RESOURCES
Section 5. “Flash Programming” (DS70191)
Code Samples
Application Notes
Software Libraries
Webinars
All related dsPIC33F/PIC24H Family Reference
Manuals Sections
Development Tools
T
7.37 MHz
FRC Accuracy
()%
FRC Tuning
()%
×
----------------------------------------------------------------------------------------------------------------------------
Note:
In the event you are not able to access the
product page using the link above, enter
this URL in your browser:
TRW
11064 Cycles
7.37 MHz
10.05
+
()
1 0.00375
–
()
×
------------------------------------------------------------------------------------------------ 1.435ms
=
TRW
11064 Cycles
7.37 MHz
10.05
–
()
1 0.00375
–
()
×
------------------------------------------------------------------------------------------------ 1.586ms
=
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TS80C51RA2-VIAB 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:High Performance 8-bit Microcontrollers
TS80C51RA2-VIAD 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:High Performance 8-bit Microcontrollers
TS80C51RA2-VIAR 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:High Performance 8-bit Microcontrollers
TS80C51RA2-VIB 功能描述:IC MCU 8BIT 256BYTE 40MHZ 44PLCC RoHS:否 類別:集成電路 (IC) >> 嵌入式 - 微控制器， 系列:80C 標(biāo)準(zhǔn)包裝:1,500 系列:AVR® ATtiny 核心處理器:AVR 芯體尺寸:8-位 速度:16MHz 連通性:I²C，LIN，SPI，UART/USART，USI 外圍設(shè)備:欠壓檢測/復(fù)位，POR，PWM，溫度傳感器，WDT 輸入/輸出數(shù):16 程序存儲器容量:8KB（4K x 16） 程序存儲器類型:閃存 EEPROM 大小:512 x 8 RAM 容量:512 x 8 電壓 - 電源 (Vcc/Vdd):2.7 V ~ 5.5 V 數(shù)據(jù)轉(zhuǎn)換器:A/D 11x10b 振蕩器型:內(nèi)部 工作溫度:-40°C ~ 125°C 封裝/外殼:20-SOIC（0.295"，7.50mm 寬） 包裝:帶卷 (TR)
TS80C51RA2-VIBB 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:High Performance 8-bit Microcontrollers
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