參數(shù)資料
型號(hào): TS68C429AMF
廠商: ATMEL CORP
元件分類: 微控制器/微處理器
英文描述: CMOS ARINC 429 Multichannel Receiver/ Transmitter MRT
中文描述: 3 CHANNEL(S), 2.5M bps, SERIAL COMM CONTROLLER, CQFP132
封裝: CERAMIC, QFP-132
文件頁(yè)數(shù): 7/43頁(yè)
文件大小: 1638K
代理商: TS68C429AMF
7
TS68C429A
2120A–HIREL–08/02
Design and Construction
Terminal Connections
Depending on the package, the terminal connections is detailed in “Terminal Connec-
tions” on page 41.
Package
The circuits are packaged in a hermetically sealed ceramic package which is conform to
case outlines of MIL-STD 1835 (when defined):
PGA 84,
CQFP 132.
The precise case outlines are described at the end of this specification (“Package
Mechanical Data” on page 40) and into MIL-STD-1835.
Special Recommended
Conditions for CMOS Devices
CMOS Latch-up
The CMOS cell is basically composed of two complementary transistors (a P-channel
and an N-channel), and, in the steady state, only one transistor is turned-on. The active
P-channel transistor sources current when the output is a logic high and presents a high
impedance when the output is a logic low. Thus the overall result is extremely low power
consumption because there is no power loss through the active P-channel transistor.
Also since only once transistor is determined by leakage currents.
Because the basic CMOS cell is composed of two complementary transistors, a para-
sitic semiconductor controlled rectifier (SCR) formed and may be triggered when an
input exceeds the supply voltage. The SCR that is formed by this high input causes the
device to become “l(fā)atched” in a mode that may result in excessive current drain and
eventual destruction of the device. Although the device is implemented with input pro-
tection diodes, care should be exercised to ensure that the maximum input voltages
specification is not exceeded from voltage transients; others may require no additional
circuitry.
CMOS/TTL Levels
The TS68C429A doesn’t satisfy totally the input/output drive requirements of TTL logic
devices, see Table 4.
Electrical Characteristics
Table 1.
Absolute Maximum Ratings
Symbol
Parameter
Test Conditions
Min
Max
Unit
V
CC
Supply Voltage
-0.3
+7.0
V
V
I
Input Voltage
-0.3
+7.0
V
P
dmax
Max Power Dissipation
400
mW
T
case
Operating Temperature
M suffix
-55
+125
°
C
V suffix
-40
+85
°
C
T
stg
Storage Temperature
-55
+150
°
C
T
j
Junction Temperature
+160
°
C
T
leads
Lead Temperature
Max 5 sec. soldering
+270
°
C
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