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參數(shù)資料
| 型號(hào)： | TS13003ACTA3 |
| 廠商： | Taiwan Semiconductor Co., Ltd. |
| 英文描述： | ECONOLINE: RBM - New Micro Size SIP 6 Package- Industry Standard Pinout- 3kVDC Isolation- UL94V-0 Package Material- Efficiency to 85% |
| 中文描述： | 高壓NPN晶體管 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大小： | 45K |
| 代理商： | TS13003ACTA3 |
TS13003A
1-1
2004/09 rev. B
TS13003A
High Voltage NPN Transistor
Pin assignment:
1. Emitter
2. Collector
3. Base
Features
High voltage
.
High speed switching
Structure
Silicon triple diffused type.
NPN silicon transistor
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
BV
CEO
= 430V
BV
CBO
= 800V
Ic = 1.5A
V
CE (SAT)
, = 0.8V @ Ic / Ib = 0.5A / 0.1A
Ordering Information
Part No.
Packing
Package
TS13003ACT B0
Bulk Pack
TO-92
TS13003ACT A3
Ammo Pack
TO-92
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
Limit
800V
430V
9
1.5
3
0.6
+150
- 55 to +150
Unit
V
V
V
A
DC
Pulse
Collector Power Dissipation
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Note: 1. Single pulse, Pw = 300uS, Duty <= 2%
Electrical Characteristics
(Ta = 25
o
C unless otherwise noted)
P
D
T
J
T
STG
W
o
C
o
C
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Collector-Base Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
I
C
= 10mA, I
B
= 0
I
C
= 10mA, I
E
= 0
I
E
= 1mA, I
C
= 0
V
CB
= 700V, I
E
= 0
V
EB
= 9V, I
C
= 0
I
C
/ I
B
= 1.5A / 0.5A
I
C
/ I
B
= 0.5A / 0.1A
V
CE
= 10V, I
C
= 0.4A
V
CE
= 2V, I
C
= 1.0A
V
CE
= 5V, I
C
= 10uA
V
CE
= 10V, I
C
= 0.1A
V
CB
= 10V, f = 0.1MHz
V
CC
= 125V, I
C
= 1A,
I
B1
= 0.2A, I
B2
= - 0.2A,
R
L
= 125ohm
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(SAT)1
V
CE(SAT)2
h
FE
800
430
9
--
--
--
--
20
8
6
4
--
--
--
--
--
--
--
--
--
--
21
1.1
--
--
--
10
10
3
0.8
40
40
40
4
0.7
V
V
V
uA
uA
V
DC Current Gain
Frequency
Output Capacitance
Turn On Time
Storage Time
Fall Time
Note : pulse test: pulse width <=300uS, duty cycle <=2%
f
T
Cob
t
ON
t
STG
t
f
MHz
pF
uS
uS
uS
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TS13003ACTB0 | ECONOLINE: RBM - New Micro Size SIP 6 Package- Industry Standard Pinout- 3kVDC Isolation- UL94V-0 Package Material- Efficiency to 85% |
| TS13003A | High Voltage NPN Transistor |
| TS13003B | High Voltage NPN Transistor |
| TS13003BCTA3 | High Voltage NPN Transistor |
| TS13003BCTB0 | High Voltage NPN Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TS13003ACTB0 | 制造商:TSC 制造商全稱:Taiwan Semiconductor Company, Ltd 功能描述:High Voltage NPN Transistor |
| TS13003B | 制造商:TSC 制造商全稱:Taiwan Semiconductor Company, Ltd 功能描述:High Voltage NPN Transistor |
| TS13003B_07 | 制造商:TSC 制造商全稱:Taiwan Semiconductor Company, Ltd 功能描述:High Voltage NPN Transistor |
| TS13003B_08 | 制造商:TSC 制造商全稱:Taiwan Semiconductor Company, Ltd 功能描述:High Voltage NPN Transistor |
| TS13003BCT | 功能描述:兩極晶體管 - BJT NPN 700V 1.5A High Voltage/Speed RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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