
TS13003A 
1-1 
2004/09 rev. B 
TS13003A  
High Voltage NPN Transistor 
   Pin assignment: 
   1. Emitter 
       2. Collector 
       3. Base 
Features 
 
High voltage
.
 
High speed switching
Structure
 
Silicon triple diffused type. 
 
NPN silicon transistor
Absolute Maximum Rating 
(Ta = 25
o
C unless otherwise noted)
BV
CEO
 = 430V 
BV
CBO
 = 800V  
Ic = 1.5A 
V
CE (SAT)
, = 0.8V @ Ic / Ib = 0.5A / 0.1A
Ordering Information 
Part No. 
Packing 
Package 
TS13003ACT B0 
Bulk Pack 
TO-92 
TS13003ACT A3 
Ammo Pack 
TO-92 
Parameter 
Collector-Base Voltage 
Collector-Emitter Voltage 
Emitter-Base Voltage 
Collector Current 
Symbol 
V
CBO
V
CEO
V
EBO
I
C
Limit 
800V 
430V 
9 
1.5 
3 
0.6 
+150 
- 55 to +150 
Unit 
V 
V 
V 
A 
DC 
Pulse 
Collector Power Dissipation 
Operating Junction Temperature 
Operating Junction and Storage Temperature Range 
Note: 1. Single pulse, Pw = 300uS, Duty <= 2% 
Electrical Characteristics
(Ta = 25
 o
C unless otherwise noted)
P
D
T
J
T
STG
W 
o
C 
o
C 
Parameter 
Conditions 
Symbol 
Min 
Typ 
Max 
Unit 
Static 
Collector-Base Voltage 
Collector-Emitter Breakdown Voltage 
Emitter-Base Breakdown Voltage 
Collector Cutoff Current 
Emitter Cutoff Current 
Collector-Emitter Saturation Voltage 
I
C 
= 10mA, I
B
 = 0 
I
C 
= 10mA, I
E 
= 0 
I
E 
= 1mA, I
C 
= 0 
V
CB 
= 700V, I
E 
= 0 
V
EB 
= 9V, I
C 
= 0 
I
C
 / I
B
 = 1.5A / 0.5A 
I
C
 / I
B
 = 0.5A / 0.1A 
V
CE 
= 10V, I
C 
= 0.4A  
V
CE 
= 2V, I
C 
= 1.0A 
V
CE 
= 5V, I
C 
= 10uA 
V
CE 
= 10V, I
C 
= 0.1A 
V
CB 
= 10V, f = 0.1MHz 
V
CC 
= 125V, I
C 
= 1A,     
I
B1
 = 0.2A, I
B2
 = - 0.2A,     
R
L 
= 125ohm   
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(SAT)1
V
CE(SAT)2
h
FE
800 
430 
9 
-- 
-- 
-- 
-- 
20 
8 
6 
4 
-- 
-- 
-- 
-- 
-- 
-- 
-- 
-- 
-- 
-- 
21 
1.1 
-- 
-- 
-- 
10 
10 
3 
0.8 
40 
40 
40 
4 
0.7 
V 
V 
V 
uA 
uA 
V 
DC Current Gain 
Frequency 
Output Capacitance 
Turn On Time 
Storage Time 
Fall Time 
Note : pulse test: pulse width <=300uS, duty cycle <=2% 
f
T
Cob 
t
ON
t
STG
t
f
MHz 
pF 
uS 
uS 
uS