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參數(shù)資料
| 型號： | TS13003 |
| 廠商： | Taiwan Semiconductor Co., Ltd. |
| 英文描述： | High Voltage NPN Transistor |
| 中文描述： | 高壓NPN晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 51K |
| 代理商： | TS13003 |
TS13003HV
1-3
2004/09 rev. A
TS13003HV
High Voltage NPN Transistor
Pin assignment:
1. Emitter
2. Collector
3. Base
Features
High voltage
.
High speed switching
Structure
Silicon triple diffused type.
NPN silicon transistor
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
BV
CEO
= 530V
BV
CBO
= 900V
Ic = 1.5A
V
CE (SAT)
, = 0.5V @ Ic / Ib = 0.5A / 0.1A
Ordering Information
Part No.
Packing
Package
TS13003HVCT B0
Bulk Pack
TO-92
TS13003HVCT A3
Ammo Pack
TO-92
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
Limit
900V
530V
10
1.5
3
0.6
+150
- 55 to +150
Unit
V
V
V
A
DC
Pulse
Collector Power Dissipation
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Note: 1. Single pulse, Pw = 300uS, Duty <= 2%
Electrical Characteristics
(Ta = 25
o
C unless otherwise noted)
P
D
T
J
T
STG
W
o
C
o
C
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Collector-Base Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
I
C
= 10mA, I
B
= 0
I
C
= 10mA, I
E
= 0
I
E
= 1mA, I
C
= 0
V
CB
= 800V, I
E
= 0
V
EB
= 10V, I
C
= 0
I
C
/ I
B
= 1.5A / 0.5A
I
C
/ I
B
= 0.5A / 0.1A
V
CE
= 10V, I
C
= 10uA
V
CE
= 10V, I
C
= 0.4A
V
CE
= 10V, I
C
= 1.0A
V
CE
= 10V, I
C
= 0.1A
V
CB
= 10V, f = 0.1MHz
V
CC
= 125V, I
C
= 1A,
I
B1
= 0.2A, I
B2
= - 0.2A,
R
L
= 125ohm
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(SAT)1
V
CE(SAT)2
h
FE
900
530
9
--
--
--
--
15
20
6
4
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
21
1.1
--
--
--
--
--
10
0.5
2.5
0.8
40
40
40
--
--
--
4
0.7
V
V
V
uA
uA
V
DC Current Gain
Frequency
Output Capacitance
Turn On Time
Storage Time
Fall Time
Note : pulse test: pulse width <=300uS, duty cycle <=2%
f
T
Cob
t
ON
t
STG
t
f
MHz
pF
uS
uS
uS
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