- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373686 > TQP770001 (TRIQUINT SEMICONDUCTOR INC) Bluetooth Two Stage (HBT) Power Amplifier (EDR Compliant) PDF資料下載
參數(shù)資料
| 型號： | TQP770001 |
| 廠商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分類： | 衰減器 |
| 英文描述： | Bluetooth Two Stage (HBT) Power Amplifier (EDR Compliant) |
| 中文描述： | 2400 MHz - 2500 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER |
| 封裝： | 2 X 2 MM, 0.60 MM HEIGHT, ROHS COMPLIANT, STSLP, QFN-12 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大小： | 233K |
| 代理商： | TQP770001 |
TQP770001
Preliminary Data Sheet
Bluetooth Two Stage (HBT) Power Amplifier (EDR Compliant)
For additional information and latest specifications, see our website:
www.triquint.com
Revision B, Sept. 18, 2006
1
Functional Block Diagram
Features
InGaP HBT Technology
Bluetooth v2.0 class 1 systems
High Efficiency: 50% @ 21.5dBm
EDR (Enhanced Data Rate) Compliant
Under EDR modulation, its low AM-AM and
AM-PM distortion guarantee high modulation
accuracy
Will operate under Bluetooth FSK, 8DPSK,
and Pi/4-DQPSK modulations
Optimized for 50 ohm System
Integrated bias controller with a power
control (variable gain) function
Small 12-pin QFN, 2x2mm module
Lead-free 260°C RoHS Compliant
Full ESD Protection
Applications
Bluetooth v2.0 + EDR class 1 systems
Package Style
12-Pin 2.0x2.0x0.6mm STSLP Package
Bottom View
Product Description
The TQP770001 Bluetooth PA is designed on TriQuint’s advanced InGaP HBT
GaAs technology offering state of the art reliability, temperature stability and
ruggedness. The PA is a two-stage design requiring several SMD tuning
elements for input and output matching, gain shaping, and bias injection.
Features include an integrated bias controller with a power control (variable gain)
function. The bias controller also acts to provide temperature compensation. The
PA is housed in a 2.0 mm x 2.0 mm 12 pin STSLP package with a grounded back
paddle. A recommended drawing is provided in section 4.3.2.
This PA is
designed to operate in Bluetooth v2.0 class 1 systems. It is also intended to be
Enhanced Data Rate (EDR) compliant with Bluetooth v2.0 + EDR specification for
both 2 Mbps and 3 Mbps modulation modes.
Electrical Specifications
Conditions: Vcc = 3.3 V, T = 25°C
Parameter
Min
Typ
Max
Units
Frequency
2.4
2.5
GHz
RF transmit power Vctrl=3.3V
19.5
21.0
-
dBm
Gain @ Pin= -10 dBm
25.0
27.0
-
dB
PAE @ 21.5dBm
50
%
Preli
minary Data Sheet: Subject to change without notice
相關PDF資料 |
PDF描述 |
|---|---|
| TQP777002 | 2.4GHz ISM Band InGaP HBT Matched Power Amplifier |
| TQPED | nullPrecision, 100UA Gain Selectable Amplifier |
| TQPHT | 0.5 um pHEMT Foundry Service |
| TQRLC | Advanced Passives Foundry Service |
| TQS5200 | SPDT Switch for Single- band and Dual-band, 802.11a/b/g Systems |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| TQP770001TR | 制造商:TriQuint Semiconductor 功能描述:RF & MW POWER AMPLIFIER |
| TQP777002 | 功能描述:射頻放大器 802.11G PA RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| TQP787011 | 功能描述:射頻放大器 5GHz Gain 32dB Pout 17dBm RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| TQP7M9101 | 功能描述:射頻放大器 400-4000MHz NF 3.9dB Gain 17.5dB .25W RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| TQP7M9101-PCB21 | 制造商:TriQuint Semiconductor 功能描述:RF & MW AMPLIFIER EVALUATION BOARD/DESIGNER KIT |
發(fā)布緊急采購，3分鐘左右您將得到回復。