參數(shù)資料
型號: TQM6M4002
廠商: TriQuint Semiconductor,Inc.
英文描述: 3V Quad-Band GSM850/900 DCS/PCS Transmit Module
中文描述: 3V的四頻GSM850/900 DCS / PCS的發(fā)送模塊
文件頁數(shù): 1/1頁
文件大?。?/td> 57K
代理商: TQM6M4002
TQM6M4002
Data Sheet
3V Quad-Band GSM850/900 DCS/PCS Transmit Module
For additional information and latest specifications, see our website:
www.triquint.com
Revision F, February 22, 2006
1
Functional Block Diagram
Features
Ultra Compact Size – 6.0x6.0x1.1mm
3
.
High SystemEfficiency – GSM850 40%,
GSM900 45% , DCS/PCS 38%
Integrated Power and SP6T Control
Integrated SP6T pHEMT Switch
Free choice of Rx ports for band selection
Integrated Low Pass Tx Harmonics Filter
Positive Supply Voltage 3.0 to 4.5 V.
50
Input and Output Impedances.
GPRS Class 12 Compatible.
CMOS Compatible Module Control Inputs.
High-Reliability InGaP HBT Technology
Ruggedness 30:1.
Applications
GSMGPRS Handsets and Modems
Dual-, Tri-, Quad-band Class 12 Compatible
Package Style
Logic
&
Power
Control
Vmod_en
Vbs2
Vbs1
VTX
Vramp
Vbat
DCS/PCS
TX RF Input
GSM850/900
TX RF Input
ANT
TX RF Output
RX RF Input
RX1
RX RF Output
RX4
RX RF Output
RX3
RX RF Output
RX2
RX RF Output
V1
Vcc1 Vcc2
ESD-
Diode
Product Description
The advanced quad-band
Transmit Module
designed for mobile handset
applications provides full RF transmt functionality in a size of only 36 mm
2
.
The GSM850/900 and DCS/PCS power amplifier blocks including power
control are combined with the low insertion loss quad-band pHEMT switch, Tx
harmonics filtering, integrated switch decoder, four receive ports, and full ESD
protection. This architecture elimnates the need for any PA-to-switch design
effort for phone designers. All four Rx ports are frequency independent and
allow flexible routing to the transceiver. Fabricated in high-reliability InGaP
HBT / pHEMT technology, the module supports GPRS class 12 operation and
provides 50 Ohms input and output impedances at all RF input and output
ports. The module control inputs are CMOS compatible and
has
no need for
an external reference voltage
.
With its excellent efficiency performance in all
4 bands, the power amplifier and switch module contributes to the overall talk-
time targets of next generation mobile handset designs.
Data Sheet: Subject to change without notice
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