- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373685 > TQM713019 (TRIQUINT SEMICONDUCTOR INC) 3V HBT GaAs CDMA 4x4mm Power Amplifier Module PDF資料下載
參數(shù)資料
| 型號： | TQM713019 |
| 廠商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分類： | 衰減器 |
| 英文描述： | 3V HBT GaAs CDMA 4x4mm Power Amplifier Module |
| 中文描述： | 824 MHz - 849 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER |
| 封裝： | 4 X 4 MM, ROHS COMPLIANT, PLASTIC, LGA-10 |
| 文件頁數(shù)： | 1/15頁 |
| 文件大小： | 241K |
| 代理商： | TQM713019 |
TQM713019
Data Sheet
3V HBT GaAs CDMA 4x4mm Power Amplifier Module
For additional information and latest specifications, see our website:
www.triquint.com
Rev. D, March 2005
1
Features
InGaP HBT Technology
High Efficiency: 41% CDMA
Low Leakage Current: < 1uA
Low Icq = 55mA
Supports new chipsets with Vref @ 2.6V
Capable of running as 0-bit PA in low bias
mode to 28dBm
Optimized for 50
system
Small 10 pin 4x4mm module
Excellent Rx band noise performance
CDMA 1XRTT, 1XEV-DO compliant
Full ESD protection
Applications
IS-95 / CDMA2000
Single mode, dual mode, and tri mode
CDMA/AMPS phones
Package Style
4mm x 4mm LGA package
Functional Block Diagram
Product Description
The TQM713019 is a 3V, 2 stage GaAs HBT Power Amplifier Module designed for
use in mobile phones. Its extremely small 4x4mmpackage makes it ideal for
today’s compact data enabled phones. Its RF performance meets the
requirements for products designed to IS-95/98 standards.
The TQM713019 is designed on TriQuint’s advanced InGaP HBT GaAs
technology offering state of the art reliability, temperature stability, and
ruggedness. Selectable bias mode and a shutdown mode with low leakage
current improves talk and standby time. The output match, realized within the
module package, optimzes efficiency/linearity at maximumrated output power.
The module is a 4x4mmland grid array with backside ground. The TQM713019 is
footprint compatible with industry standard 4x4mmCDMA PA modules.
Electrical Specifications
Parameter
Frequency
Min
824
Typ
Max
849
Units
MHz
CDMA mode maximum Pout
1
28
dBm
Gain
29
dB
CDMA ACPR
50
dBc
CDMA ALTR
65
dBc
Power Supply Current @ 28dBm
450
mA
I
REF
2.0
mA
Rx Band Noise
-140
dBm/Hz
6
7
8
9
10
5
4
3
2
1
Vcc1
RFin
GND
Vmode
Vref
Vcc2
GND
RFout
GND
GND
1 Bit Bias Control
Note 1 : CDMA Mode: V
CC1
=3.4VDC, V
CC2
=3.4VDC, V
REF
=2.85VDC, Tc=25°C
Data Sheet: Subject to change without notice
相關PDF資料 |
PDF描述 |
|---|---|
| TQM713024_06 | 3V GaAs HBT CDMA / WCDMA Cellular Power Amplifier Module |
| TQM713024 | 3V GaAs HBT CDMA / WCDMA Cellular Power Amplifier Module |
| TQM7136 | 3V HBT SiGe CDMA POWER AMPLIFIER MODULE |
| TQM7138 | 3V HBT SiGe CDMA 4x4mm POWER AMPLIFIER MODULE |
| TQM7M4006 | 3V Quad-Band GSM850/GSM900/DCS/PCS Power Amplifier Module |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| TQM713024 | 功能描述:射頻放大器 Cell band CDMA PAM RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| TQM713024_06 | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:3V GaAs HBT CDMA / WCDMA Cellular Power Amplifier Module |
| TQM7136 | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:3V HBT SiGe CDMA POWER AMPLIFIER MODULE |
| TQM7138 | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:3V HBT SiGe CDMA 4x4mm POWER AMPLIFIER MODULE |
| TQM716015 | 功能描述:功率放大器 Cellular Bands 5 RoHS:否 制造商:TriQuint Semiconductor 封裝 / 箱體: 工作電源電壓:28 V 電源電流:2.5 A 工作溫度范圍: 封裝: |
發(fā)布緊急采購，3分鐘左右您將得到回復。