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參數(shù)資料
| 型號(hào)： | TQHBT3 |
| 廠商： | TriQuint Semiconductor,Inc. |
| 英文描述： | InGaP HBT Foundry Service |
| 中文描述： | InGaP HBT寬頻代工服務(wù) |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大小： | 122K |
| 代理商： | TQHBT3 |
Production Process
TQHBT3
InGaP HBT Foundry Service
Features
2– and 3-um emitter widths
>22 dB MAG @ 6 GHz; with 3-um
emitters
Amplifier Ruggedness: VSWR 70:1
@ 5 V supply
High Linearity in PA applications
InGaP Emitter Process for High Re-
liability and Thermal Stability
Base Etch Stop for Uniformity
MOCVD Epitaxy
High Density Interconnects;
2 Global, 1 Local
Over 6 μm Total Thickness
Dielectric Encapsulated Metals
Thick Metal Interconnects:
Enhanced Thermal Management
Minimum Die Size
Effective Base Ballasting for Maxi-
mum Gain
150 mm Wafers
High-Q Passives
NiCr Thin Film Resistors
High Value Capacitors & Stacked
Capacitors
Backside Vias Optional
Validated Models and Design
Support
Applications
Power Amplifiers
Driver Amplifiers
Wideband, General Purpose
Amplifiers
General Description
TriQuint’s new TQHBT3 process is a highly reliable InGaP
HBT process with three levels of interconnecting metal and
state-of-the-art device performance. Thick metal intercon-
nects and high quality passives promote integration. The thick
metal interconnects, which promote enhanced thermal man-
agement, and high density capacitors keep die sizes small.
MOCVD epitaxial processes are utilized to grow the active
layers. A carbon-doped Base and InGaP Emitter are utilized
for high RF performance consistent with high reliability. De-
signs utilizing the 3-um emitter width have the performance of
previous 2-um emitters, but with the reliability and ruggedness
associated with wider emitters. Precision NiCr resistors and
high value MIM capacitors are included. The three metal layers
are encapsulated in a high performance dielectric that allows
wiring flexibility and plastic packaging simplicity.
Semiconductors for Communications
www.triquint.com
Page 1 of 6; Rev 1.1 2/8/2005
TriQuint Semiconductor
2300 NE Brookwood Pkwy
Hillsboro, Oregon 97124
Phone: 503-615-9000
Fax: 503-615-8905
Email: info@triquint.com
TQHBT3 Process Cross-Section
Dielectric
Metal 2 - 4um
Dielectric
MIM
NiCr
Metal 0
C
C
B
B
E
Collector
Sub Collector
Buffer & Substrate
Isolation Implant
Metal 1 - 2um
Metal 1 - 2um
Base
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