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參數(shù)資料
| 型號： | TQHIP |
| 廠商： | TriQuint Semiconductor,Inc. |
| 英文描述： | nullPrecision, 100UA Gain Selectable Amplifier |
| 中文描述： | nullPrecision，100uA的可選增益放大器 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 117K |
| 代理商： | TQHIP |
Production Process
TQHiP
Power MESFET Foundry Service
Features
Power MESFET Process
Interconnects:
2 Global (one airbridge)
1 Local
High-Q Passives
Bulk & Thin Film Resistors
Backside Vias Optional
High Volume Production
Processes
Validated Models and
Design Support
Applications
Power Amplifiers
Switches
Frequencies thru X-Band
Base Station Driver
Amplifiers
CATV Line Amplifiers
Cellular Power Amps, Driv-
ers, Switches
General Description
TriQuint’s TQHiP process is our robust, high power density
MESFET process. It provides a straight-forward, low cost
process for a variety of circuits and applications. Its high oper-
ating and breakdown voltages make it ideal for wireless or
wired infrastructure applications. A thick (4 μm) gold airbridge
complements the 2 μm thick gold global metal and 0.5 μm
thick gold surface layer for wiring flexibility and interconnect
density. Precision NiCr resistors and high value MIM capaci-
tors are included.
Semiconductors for Communications
www.triquint.com
TriQuint Semiconductor
2300 NE Brookwood Pkwy
Hillsboro, Oregon 97124
Phone: 503-615-9000
Fax: 503-615-8905
Email: info@triquint.com
Page 1 of 4; Rev 2.1 4/30/02
Isolation Implant
NiCr
N-/P- Channel
N+
N+
Metal 0
Metal 1 – 2 um
Metal 1
Air Bridge - 4um
MIM Metal
D MESFET
NiCr Resistor
MIM Capacitor
Semi-Insulating GaAs Substrate
TQHiP Process Cross-Section
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