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參數(shù)資料
| 型號： | TQ2060-MC |
| 英文描述： | CPU System Clock Generator |
| 中文描述： | CPU系統(tǒng)時鐘發(fā)生器 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大小： | 139K |
| 代理商： | TQ2060-MC |
TQ2060
3
S
P
For additional information and latest specifications, see our website:
www.triquint.com
Table 2. Absolute Maximum Ratings
Storage Temperature
Ambient temperature with power applied
Supply voltage to ground potential
DC input voltage
DC input current
Package thermal resistance (MQuad)
Die junction temperature
–65
°
C to +150
°
C
–55
°
C to +110
°
C
–0.5 V to +7.0 V
–0.5 V to (V
DD
+ 0.5) V
–30 mA to +5 mA
θ
JA
= 45
°
C/W
T
J
= 150
°
C
Note:
Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device.
The device should be operated only under the DC and AC conditions shown below.
Table 3. DC Characteristics (V
DD
= +5 V + 5%, T
A
= 0
°
C to +70
°
C)
1
Symbol
Description
Test Conditions
Min
Typ
Max
Unit
V
OH
V
OL
V
CMO
V
OUT
V
IH2
Output HIGH voltage
Output LOW voltage
Output common mode voltage
Output differential voltage
Input HIGH level
V
CC
= Min PECL load
V
CC
= Min PECL load
PECL
PECL
Guaranteed input logical
HIGH Voltage for all inputs
Guaranteed input logical
LOW Voltage for all inputs
V
DD
= Max V
IN
= 0.40 V
V
DD
= Max V
IN
= 2.7 V
V
DD
= Max V
IN
= 5.3 V
V
DD
= Max
V
CC
–1.20
V
CC
–2.00
V
CC
–1.60
0.6
2.0
V
CC
–0.50
V
CC
–1.60
V
CC
–1.20
1.2
V
V
V
V
V
V
IL2
Input LOW level
0.8
V
I
IL
I
IH
I
I
I
DDS3
Input LOW current
Input HIGH current
Input HIGH current
Power supply current
–150
0
2
85
–400
25
1000
120
μ
A
μ
A
μ
A
mA
V
I
Input clamp voltage
V
DD
= Min I
IN
= –18 mA
–0.70
–1.2
V
Table 4. Capacitance
Symbol
Description
Test Conditions
Min
Typ
Max
Unit
C
IN
C
OUT
Input Capacitance
Output Capacitance
V
IN
= 2.0 V at f = 1 MHz
V
OUT
= 2.0 V at f = 1 MHz
6
9
pF
pF
Notes: 1. Typical limits are at V
DD
= 5.0 V and T
A
= 25C.
2. These are absolute values with respect to device ground and include all overshoots due to system or tester noise.
3. This parameter is measured with device not switching and unloaded.
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